公开(公告)号：US20150145092A1

公开(公告)日：2015-05-28

申请号：US14553697

申请日：2014-11-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keiichi ITAGAKI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first isolation insulating film. The current blocking region includes an impurity diffusion layer, and a defect extension preventing layer disposed in contact with the impurity diffusion layer to form a twin with the impurity diffusion layer. The defect extension preventing layer has a different crystal structure from that of the impurity diffusion layer. At least a part of the current blocking region is disposed in contact with the first isolation insulating film.

Abstract translation: 半导体器件包括半导体衬底，光电转换元件，第一隔离绝缘膜和电流阻挡区域。 第一隔离绝缘膜形成在光电转换元件周围。 电流阻挡区域形成在光电转换元件和第一隔离绝缘膜之间的区域中。 电流阻挡区域包括杂质扩散层和与杂质扩散层接触形成与杂质扩散层成双的缺陷延伸防止层。 缺陷延伸防止层具有与杂质扩散层不同的晶体结构。 电流阻挡区域的至少一部分设置成与第一隔离绝缘膜接触。

公开(公告)号：US20180069038A1

公开(公告)日：2018-03-08

申请号：US15807251

申请日：2017-11-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keiichi ITAGAKI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first isolation insulating film. The current blocking region includes an impurity diffusion layer, and a defect extension preventing layer disposed in contact with the impurity diffusion layer to form a twin with the impurity diffusion layer. The defect extension preventing layer has a different crystal structure from that of the impurity diffusion layer. At least a part of the current blocking region is disposed in contact with the first isolation insulating film.

公开(公告)号：US20170118419A1

公开(公告)日：2017-04-27

申请号：US15399878

申请日：2017-01-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keiichi ITAGAKI ,  Tatsuya KUNIKIYO

IPC: H04N5/341 ,  H01L27/146 ,  H04N5/225

CPC classification number: H04N5/341 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/2254

Abstract: Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed.

公开(公告)号：US20150243702A1

公开(公告)日：2015-08-27

申请号：US14634542

申请日：2015-02-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keiichi ITAGAKI ,  Tatsuya KUNIKIYO

IPC: H01L27/146 ,  H04N5/341 ,  H04N9/04

CPC classification number: H04N5/341 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/2254

Abstract: Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed.

Abstract translation: 提供一种半导体器件，其能够高精度地检测各种颜色的光而不使用滤色器，特别是提高通过长波长光的光电转换获得的电荷的检测精度及其制造和控制方法。 半导体器件具有p型半导体衬底以及第一，第二和第三像素区域。 这些区域各自包括p型半导体衬底中的p型阱区域和与其构成pn结的n型区域。 第一像素区域的p型阱区域从主表面到最下部分比第二像素区域和第三像素区域更薄。 在与第一和第二像素区域的p型阱区域的主表面相对的一侧上，进一步放置与p型阱区域邻接的掩埋p型阱区域。