公开(公告)号：US10770447B2

公开(公告)日：2020-09-08

申请号：US16400465

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Jin Lee ,  Seok Ho Kim ,  Kwang Jin Moon ,  Byung Lyul Park ,  Nae In Lee

IPC: H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/67

Abstract: There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.

公开(公告)号：US10468400B2

公开(公告)日：2019-11-05

申请号：US15869808

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pil Kyu Kang ,  Seok Ho Kim ,  Tae Yeong Kim ,  Kwang Jin Moon ,  Ho Jin Lee

IPC: H01L25/00 ,  H01L25/065 ,  H01L21/768 ,  H01L21/18 ,  H01L23/00

Abstract: A method of manufacturing a substrate structure includes providing a first substrate including a first device region on a first surface, providing a second substrate including a second device region on a second surface, such that a width of the first device region is greater than a width of the second device region, and bonding the first substrate and the second substrate, such that the first and second device regions are facing each other and are electrically connected to each other.

公开(公告)号：US10325897B2

公开(公告)日：2019-06-18

申请号：US15705427

申请日：2017-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Jin Lee ,  Seok Ho Kim ,  Kwang Jin Moon ,  Byung Lyul Park ,  Nae In Lee

IPC: H01L21/768 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

Abstract: There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.