公开(公告)号：US11659713B2

公开(公告)日：2023-05-23

申请号：US17495320

申请日：2021-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Won Park ,  Kyeong Jin Park ,  Kwang Soo Kim

IPC: H01L27/11573 ,  H01L23/535 ,  H01L27/11582

CPC classification number: H01L27/11573 ,  H01L23/535 ,  H01L27/11582

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.

公开(公告)号：US10825832B2

公开(公告)日：2020-11-03

申请号：US16780999

申请日：2020-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Mo Gu ,  Kyeong Jin Park ,  Hyun Mog Park ,  Byoung Il Lee ,  Tak Lee ,  Jun Ho Cha

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11548 ,  H01L27/11524 ,  H01L27/1157

Abstract: A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.

公开(公告)号：US20200185400A1

公开(公告)日：2020-06-11

申请号：US16451385

申请日：2019-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Won Park ,  Kyeong Jin Park ,  Kwang Soo Kim

IPC: H01L27/11573 ,  H01L27/11582 ,  H01L23/535

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.

公开(公告)号：US10553605B2

公开(公告)日：2020-02-04

申请号：US15933695

申请日：2018-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Mo Gu ,  Kyeong Jin Park ,  Hyun Mog Park ,  Byoung Il Lee ,  Tak Lee ,  Jun Ho Cha

IPC: H01L27/11582 ,  H01L27/11575 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11565

Abstract: A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.

公开(公告)号：US20190019807A1

公开(公告)日：2019-01-17

申请号：US15933695

申请日：2018-03-23

Applicant: Samsung Electronics Co, Ltd

Inventor： JI MO GU ,  Kyeong Jin Park ,  Hyun Mog Park ,  Byoung ll Lee ,  Tak Lee ,  Jun Ho Cha

IPC: H01L27/11582 ,  H01L27/11575 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11524

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575

Abstract: A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.