公开(公告)号：US20230113319A1

公开(公告)日：2023-04-13

申请号：US17961635

申请日：2022-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bonhong GU ,  Minwoo KIM ,  Jinyong KIM ,  Hyodong BAN ,  Jungwoo SONG ,  Daegwon HA

IPC: H01L27/108

Abstract: A semiconductor device includes conductive patterns, an insulating pattern between the conductive patterns, an insulating etch stop layer on the conductive patterns and the insulating pattern, a capacitor including first electrodes in contact with the first conductive patterns, a second capacitor electrode, and a dielectric between the first and second capacitor electrodes, an insulating structure covering the capacitor and the insulating etch stop layer, and a peripheral contact plug through the insulating structure and the insulating etch stop layer and including first through fifth plug regions stacked on top of each other, at least a portion of a side surface of the fourth plug region having an inclination angle different from inclinations angles of the third and fifth plug regions, and a vertical thickness of the fifth plug region being at least twice as great as a sum of vertical thicknesses of the first to fourth plug regions.

公开(公告)号：US20230005408A1

公开(公告)日：2023-01-05

申请号：US17859112

申请日：2022-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoyoung LEE ,  Minwoo LEE ,  Donghyun YEOM ,  Kwangtai KIM ,  Minwoo KIM ,  Seungryeol KIM ,  Juseok LEE

IPC: G09G3/20

Abstract: Certain embodiments relate to an electronic device and a method for changing gamma values and may include determining a target gamma curve related to first image data to be displayed by a display panel, receiving a request for switching a scan rate of the display panel from a first frequency to a second frequency, determining a gamma offset and an offset margin in response to reception of the request, determining a limit gamma curve generated by applying the gamma offset and the offset margin to the first gamma curve, generating second image data by correcting the first image data, based on a difference value between the limit gamma curve and the target gamma curve to map the first image data to the target gamma curve, and driving the display panel, based on the second image data and the limit gamma curve. This document may further include various other embodiments.

公开(公告)号：US20210248957A1

公开(公告)日：2021-08-12

申请号：US17161800

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwanghui LEE ,  Seungjin KIM ,  Minwoo KIM ,  Seoyoung LEE ,  Woojun JUNG

IPC: G09G3/3225

Abstract: In accordance with certain embodiments, an electronic device comprises: a memory; a display; and a processor operatively connected with the memory, wherein the processor is configured to: identify a target refresh rate and a current refresh rate of the display; and change the refresh rate of the display to a first refresh rate between the current refresh rate and the target refresh rate before changing the refresh rate of the display to the target refresh rate.

公开(公告)号：US20160237558A1

公开(公告)日：2016-08-18

申请号：US15017753

申请日：2016-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hwansoo SUH ,  Youngjae SONG ,  Qinke WU ,  Sungjoo LEE ,  Minwoo KIM ,  Sangwoo PARK

IPC: C23C16/30 ,  C01B21/064 ,  C23C16/02

CPC classification number: C01B21/064 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0254 ,  C23C16/342

Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 μm to about 1,000 μm.

Abstract translation: 无缝六边形h-BN原子单层薄膜具有无缝合并的多个h-BN晶粒的假单晶结构。 每个h-BN颗粒的尺寸在约10μm至约1,000μm的范围内。