公开(公告)号：US20240355688A1

公开(公告)日：2024-10-24

申请号：US18642877

申请日：2024-04-23

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Arun Murali ,  Caleb Miskin

IPC分类号： H01L21/66 ,  C23C16/02 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67

CPC分类号： H01L22/20 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67248

摘要： A method for removing contaminants from an upper surface of a substrate inside various chambers of a semiconductor processing system is provided. The method may comprise heating at least a portion of the upper surface to a predetermined upper surface bake temperature to induce a chemical reaction of the contaminants with hydrogen gas in the deposition chamber and remove contaminants from the upper surface. The temperature of the bulk material forming the substrate remains substantially lower than the predetermined upper surface bake temperature. After heating the upper surface to remove the contaminants, a material layer may be deposited onto the upper surface. The semiconductor processing system and computer instructions for operating the semiconductor processing system are also described.

公开(公告)号：US20240304437A1

公开(公告)日：2024-09-12

申请号：US18650014

申请日：2024-04-29

申请人： Applied Materials, Inc.

发明人： Chuanxi YANG ,  Hang YU ,  Sanjay KAMATH ,  Deenesh PADHI ,  Honggun KIM ,  Euhngi LEE ,  Zubin HUANG ,  Diwakar N. KEDLAYA ,  Rui CHENG ,  Karthik JANAKIRAMAN

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/513

CPC分类号： H01L21/0217 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/513 ,  H01L21/02274

摘要： Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

公开(公告)号：US20240186136A1

公开(公告)日：2024-06-06

申请号：US18061126

申请日：2022-12-02

申请人： Intel Corporation

发明人： Mahdi Mohammadighaleni ,  Whitney M. Bryks ,  Shayan Kaviani ,  Joshua J. Stacey ,  Thomas S. Heaton

IPC分类号： H01L21/02 ,  C23C16/02

CPC分类号： H01L21/0212 ,  C23C16/0209 ,  C23C16/0272 ,  H01L21/02422 ,  H01L21/0262

摘要： In one embodiment, an integrated circuit apparatus (e.g., package substrate) includes a polymeric layer between a metal and a dielectric or between a metal and a glass. The polymeric layer may be conformally deposited using a vacuum-based vapor deposition technique, e.g., initiated chemical vapor deposition (iCVD).

公开(公告)号：US20240071786A1

公开(公告)日：2024-02-29

申请号：US18269998

申请日：2021-12-23

申请人： Viatron Co., Ltd.

发明人： Hyoung June Kim ,  Byung Kuk Kim ,  Wang Jun Park ,  Oh Sung Kwon ,  Jin Hong Lee ,  Nam Chun Lee

IPC分类号： H01L21/67 ,  C23C16/02

CPC分类号： H01L21/67115 ,  C23C16/0209

摘要： The present disclosure provides substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam irradiating plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a laser beam to a lower surface of the flat substrate through the beam irradiating plate; and a gas circulation cooling module for spraying a cooling gas to an upper surface of the infrared transmitting plate, thereby cooling the infrared transmitting plate.

公开(公告)号：US20230407521A1

公开(公告)日：2023-12-21

申请号：US18450161

申请日：2023-08-15

申请人： TOKUYAMA CORPORATION

发明人： Masayuki FUKUDA ,  Toru NAGASHIMA

IPC分类号： C30B29/40 ,  C23C16/02 ,  C23C16/34 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02 ,  H01L33/00

CPC分类号： C30B29/403 ,  C23C16/0209 ,  C23C16/34 ,  C30B25/186 ,  C30B25/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L33/0075

摘要： A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (vA−vB)/vB is within the range of ±0.1%, wherein vA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and vB is an average value of peak wave numbers of micro-Raman spectra in the outer region.

公开(公告)号：US11788189B2

公开(公告)日：2023-10-17

申请号：US17004724

申请日：2020-08-27

申请人： Halliburton Energy Services, Inc.

发明人： Christopher Michael Jones ,  James M. Price ,  William Joseph Soltmann

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/02

CPC分类号： C23C16/45544 ,  C23C16/0209 ,  C23C16/52

摘要： A coating system for coating, with a surface coating process, an interior surface of a housing defining an interior volume, having: a first closure and a second closure to sealingly engage with the housing; one or more first flow lines and second flow lines fluidically coupled to the first and second closure, respectively; a pressurized cell comprising a pressurized gas comprising at least one reactant and at a pressure of greater than a pressure within the housing, wherein the pressurized cell is fluidically coupled to a pressurized cell line comprising one of the first flow lines or second flow lines; and a controller in electronic communication with the pressurized cell and configured to control injection of a pulse of the pressurized gas into a flow of inert gas in the pressurized cell line, whereby the pulse is introduced into the interior volume, coating the interior surface with a coating layer.

公开(公告)号：US11767612B2

公开(公告)日：2023-09-26

申请号：US16649382

申请日：2018-09-21

申请人： TOKUYAMA CORPORATION

发明人： Masayuki Fukuda ,  Toru Nagashima

IPC分类号： C30B29/40 ,  C23C16/02 ,  C23C16/34 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02 ,  H01L33/00

CPC分类号： C30B29/403 ,  C23C16/0209 ,  C23C16/34 ,  C30B25/186 ,  C30B25/20 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02389 ,  H01L21/02634 ,  H01L21/02658 ,  H01L33/0075

摘要： A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (νA−νB)/νB is within the range of ±0.1%, wherein νA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and νB is an average value of peak wave numbers of micro-Raman spectra in the outer region.

公开(公告)号：US11732360B2

公开(公告)日：2023-08-22

申请号：US16630959

申请日：2019-02-28

申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation

发明人： Takahiro Hiramatsu ,  Hiroyuki Orita ,  Nobuyoshi Namito ,  Yusuke Iwao

IPC分类号： C23C16/54 ,  C23C16/56 ,  B05B9/00 ,  C23C16/458 ,  C23C16/02 ,  C23C16/48 ,  H01L31/18 ,  B05D1/02 ,  B05D3/02 ,  C23C16/455

CPC分类号： C23C16/4582 ,  C23C16/0209 ,  C23C16/482 ,  C23C16/54 ,  C23C16/56 ,  B05B9/00 ,  B05D1/02 ,  B05D3/0227 ,  B05D3/0263 ,  C23C16/45574 ,  H01L31/18

摘要： Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

公开(公告)号：US11732356B2

公开(公告)日：2023-08-22

申请号：US16941843

申请日：2020-07-29

申请人： Applied Materials, Inc.

发明人： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC分类号： C23C16/455 ,  C23C16/02 ,  H01L21/56 ,  H10N70/00

CPC分类号： C23C16/45542 ,  C23C16/0209 ,  C23C16/45546 ,  C23C16/45553 ,  H01L21/56 ,  H10N70/023

摘要： Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

公开(公告)号：US20230257409A1

公开(公告)日：2023-08-17

申请号：US18139053

申请日：2023-04-25

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Soyoung LEE ,  Hiroshi NIHEI ,  Masashi SHIRAI ,  Jaesoon LIM ,  Younjoung CHO

IPC分类号： C07F15/06 ,  H01L21/285 ,  C23C16/18 ,  C23C16/44 ,  C23C16/02 ,  H01L21/768 ,  C23C16/04

CPC分类号： C07F15/065 ,  H01L21/28562 ,  H01L21/28568 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/0227 ,  H01L21/76849 ,  C23C16/0209 ,  C23C16/04

摘要： A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,