公开(公告)号：US20140177321A1

公开(公告)日：2014-06-26

申请号：US14093076

申请日：2013-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN-KOOK PARK ,  YOUNG-DON CHOI

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/0052 ,  G11C2213/71 ,  G11C2213/72

Abstract: A method is for driving a nonvolatile memory device, where the nonvolatile memory device includes a memory cell array composed of resistance memory cells. The method includes electrically connecting a clamping circuit, a line resistor and a selected one of the resistance memory cells in series between a sensing node and a ground. The method further includes adjusting at least one of a clamping voltage of the clamping circuit and a resistance of the line resistor according to a relative location of the selected one of the resistance memory cells within the memory cell array, and applying a read current to the sense node and sensing a voltage of the sense node to read a data stored in the selected one of the resistance memory cells.

Abstract translation: 一种用于驱动非易失性存储器件的方法，其中非易失性存储器件包括由电阻存储器单元组成的存储单元阵列。 该方法包括将感测节点和接地之间的串联的钳位电路，线路电阻器和所选择的电阻存储器单元电连接。 该方法还包括根据存储单元阵列内所选择的一个电阻存储器单元的相对位置来调整钳位电路的钳位电压和线路电阻器的电阻中的至少一个，并将读取电流施加到 感测节点并且感测感测节点的电压以读取存储在所选择的一个电阻存储器单元中的数据。