公开(公告)号：US20190312195A1

公开(公告)日：2019-10-10

申请号：US16449876

申请日：2019-06-24

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.

公开(公告)号：US20190272870A1

公开(公告)日：2019-09-05

申请号：US15910606

申请日：2018-03-02

Applicant: SanDisk Technologies LLC

Inventor： Won Ho Choi ,  Young-Suk Choi

IPC: G11C11/54 ,  H01L43/08 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/02

Abstract: Neuron circuit structures are presented which employ magnetic tunnel junction (MTJ) elements that change state probabilistically in response to application of electrical source currents that emulate synaptic activity. Some implementations form probabilistic neuron circuits using homogeneous perpendicular spin-transfer torque (STT) MTJ elements. These neuron circuits include a perpendicular STT reference MTJ element coupled via an electrical node with a perpendicular STT neuron MTJ element that can change state. The electrical node for each neuron circuit couples a neuron MTJ element or “perturbation” element to a reference element, and also to an electrical current employed to influence probabilistic magnetization state changes in the perturbation MTJ element. A read current can be applied to the perturbation element to produce an output voltage at the electrical node indicative of a magnetization state of the perturbation element.

公开(公告)号：US10381548B1

公开(公告)日：2019-08-13

申请号：US15891370

申请日：2018-02-08

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: G11C11/15 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  G11C11/401 ,  G11C11/41

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.