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    NEAR FIELD TRANSDUCERS (NFTS) AND METHODS OF FORMING NFTS
    11.
    发明申请
    NEAR FIELD TRANSDUCERS (NFTS) AND METHODS OF FORMING NFTS 审中-公开

    公开(公告)号：US20200224307A1

    公开(公告)日：2020-07-16

    申请号：US16726512

    申请日：2019-12-24

    Applicant: Seagate Technology LLC

    Inventor： Tong Zhao ,  Michael C. Kautzky ,  Sarbeswar Sahoo ,  Justin Brons ,  Jie Gong ,  Yuhang Cheng

    IPC: C23C14/58 ,  G11B5/31

    Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

    DEVICES INCLUDING A DIFUSSION BARRIER LAYER
    14.
    发明申请
    DEVICES INCLUDING A DIFUSSION BARRIER LAYER 有权
    包括扩散障碍层的设备

    公开(公告)号：US20160275979A1

    公开(公告)日：2016-09-22

    申请号：US15060914

    申请日：2016-03-04

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Sarbeswar Sahoo ,  Martin Blaber ,  Hui Brickner ,  Tong Zhao ,  Yuhang Cheng ,  John Duda ,  Tae-Woo Lee

    IPC: G11B5/60 ,  G11B5/31

    CPC classification number: G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135°.

    Abstract translation: 具有空气轴承表面（ABS）的装置，该装置包括一个写柱; 包括钉和盘的近场换能器（NFT），其中所述栓在所述装置的ABS处; 靠近NFT盘的散热片; 位于设备的ABS处的与NFT的钉相邻的电介质间隙; 以及位于写极和电介质间隙之间的适形扩散阻挡层，盘和散热器，其中，共形扩散阻挡层形成至少一个不大于135°的角度。

    DEVICES INCLUDING A NEAR FIELD TRANSDUCER AND AT LEAST ONE ASSOCIATED ADHESION LAYER
    15.
    发明申请
    DEVICES INCLUDING A NEAR FIELD TRANSDUCER AND AT LEAST ONE ASSOCIATED ADHESION LAYER 有权
    包括近场传感器和至少一个相关粘结层的装置

    公开(公告)号：US20150340052A1

    公开(公告)日：2015-11-26

    申请号：US14720901

    申请日：2015-05-25

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Vijay Karthik Sankar ,  Tong Zhao ,  Yongjun Zhao ,  Michael C. Kautzky ,  Hui Brickner ,  Sarbeswar Sahoo

    IPC: G11B5/48

    CPC classification number: G11B5/6088 ,  G11B5/31 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/314 ,  G11B5/3163 ,  G11B7/24059 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.

    Abstract translation: 包括近场换能器（NFT），NFT具有盘和钉的装置以及具有五个表面的钉; 以及至少一个位于所述栓的五个表面中的至少一个上的粘合层，所述粘合层包括以下中的一种或多种：钇（Y），锡（Sn），铁（Fe），铜（Cu） 碳（C），钬（Ho），镓（Ga），银（Ag），镱（Yb），铬（Cr），钽（Ta），铱（Ir），锆（Zr），钇（Y） 钪（Sc），钴（Co），硅（Si），镍（Ni），钼（Mo），铌（Nb），钯（Pd），钛（Ti），铼（Re），锇（Os） 铂（Pt），铝（Al），钌（Ru），铑（Rh），钒（V），锗（Ge），锡（Sn），镁（Mg），铁（Fe），铜（Cu） 钨（W），铪（Hf），碳（C），硼（B），钬（Ho），锑（Sb），镓（Ga），锰（Mn） 铋（Bi），锌（Zn），镱（Yb）及其组合。

    METHODS OF FORMING NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS FORMED THEREBY
    18.
    发明申请
    METHODS OF FORMING NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS FORMED THEREBY 有权
    形成现场传感器的方法和形成的现场传感器

    公开(公告)号：US20150162028A1

    公开(公告)日：2015-06-11

    申请号：US14561825

    申请日：2014-12-05

    Applicant: SEAGATE TECHNOLOGY LLC.

    Inventor： Sethuraman Jayashankar ,  Sarbeswar Sahoo

    IPC: G11B5/31

    CPC classification number: G11B5/6088 ,  G11B5/314 ,  G11B2005/0021

    Abstract: A method of forming a near field transducer (NFT), the method including the steps of depositing a primary material; and implanting a secondary element, wherein both the primary material and the secondary element are chosen such that the primary material is densified via implantation of the secondary element.

    Abstract translation: 一种形成近场换能器（NFT）的方法，所述方法包括沉积初级材料的步骤; 以及植入次要元件，其中所述主要材料和所述次要元件都被选择为使得所述主要材料通过所述次要元件的注入致密化。

    METHODS OF FORMING MAGNETIC MATERIALS AND ARTICLES FORMED THEREBY
    19.
    发明申请
    METHODS OF FORMING MAGNETIC MATERIALS AND ARTICLES FORMED THEREBY 审中-公开
    形成磁性材料的方法和形成的制品

    公开(公告)号：US20140093701A1

    公开(公告)日：2014-04-03

    申请号：US13630036

    申请日：2012-09-28

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Sarbeswar Sahoo ,  Meng Zhu ,  Michael C. Kautzky

    IPC: H01F41/14 ,  B32B5/16 ,  B32B1/00 ,  B32B33/00

    Abstract: Methods of forming a layer of magnetic material on a substrate, the method including: configuring a substrate in a chamber; controlling the temperature of the substrate at a substrate temperature, the substrate temperature being at or below about 250° C.; and introducing one or more precursors into the chamber, the one or more precursors including: cobalt (Co), nickel (Ni), iron (Fe), or combinations thereof, wherein the precursors chemically decompose at the substrate temperature, and wherein a layer of magnetic material is formed on the substrate, the magnetic material including at least a portion of the one or more precursors, and the magnetic material having a magnetic flux density of at least about 1 Tesla (T).

    Abstract translation: 在基板上形成磁性材料层的方法，所述方法包括：在室内配置基板; 在衬底温度下控制衬底的温度，衬底温度在或低于约250℃; 并且将一种或多种前体引入所述室中，所述一种或多种前体包括：钴（Co），镍（Ni），铁（Fe）或其组合，其中所述前体在衬底温度下化学分解， 磁性材料形成在衬底上，磁性材料包括一种或多种前体的至少一部分，磁性材料具有至少约1特斯拉（T）的磁通密度。

    Near-field transducer having secondary atom higher concentration at bottom of the peg
    20.
    发明授权
    Near-field transducer having secondary atom higher concentration at bottom of the peg 有权

    公开(公告)号：US11162169B2

    公开(公告)日：2021-11-02

    申请号：US16726512

    申请日：2019-12-24

    Applicant: Seagate Technology LLC

    Inventor： Tong Zhao ,  Michael C. Kautzky ,  Sarbeswar Sahoo ,  Justin Brons ,  Jie Gong ,  Yuhang Cheng

    IPC: C23C14/58 ,  G11B5/31 ,  G11B5/00 ,  G11B5/60

    Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

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