DEVICES INCLUDING A NEAR FIELD TRANSDUCER AND AT LEAST ONE ASSOCIATED ADHESION LAYER
    3.
    发明申请
    DEVICES INCLUDING A NEAR FIELD TRANSDUCER AND AT LEAST ONE ASSOCIATED ADHESION LAYER 有权
    包括近场传感器和至少一个相关粘结层的装置

    公开(公告)号:US20150340052A1

    公开(公告)日:2015-11-26

    申请号:US14720901

    申请日:2015-05-25

    Abstract: Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: yttrium (Y), tin (Sn), iron (Fe), copper (Cu), carbon (C), holmium (Ho), gallium (Ga), silver (Ag), ytterbium (Yb), chromium (Cr), tantalum (Ta), iridium (Ir), zirconium (Zr), yttrium (Y), scandium (Sc), cobalt (Co), silicon (Si), nickel (Ni), molybdenum (Mo), niobium (Nb), palladium (Pd), titanium (Ti), rhenium (Re), osmium (Os), platinum (Pt), aluminum (Al), ruthenium (Ru), rhodium (Rh), vanadium (V), germanium (Ge), tin (Sn), magnesium (Mg), iron (Fe), copper (Cu), tungsten (W), hafnium (Hf), carbon (C), boron (B), holmium (Ho), antimony (Sb), gallium (Ga), manganese (Mn), silver (Ag), indium (In), bismuth (Bi), zinc (Zn), ytterbium (Yb), and combinations thereof.

    Abstract translation: 包括近场换能器(NFT),NFT具有盘和钉的装置以及具有五个表面的钉; 以及至少一个位于所述栓的五个表面中的至少一个上的粘合层,所述粘合层包括以下中的一种或多种:钇(Y),锡(Sn),铁(Fe),铜(Cu) 碳(C),钬(Ho),镓(Ga),银(Ag),镱(Yb),铬(Cr),钽(Ta),铱(Ir),锆(Zr),钇(Y) 钪(Sc),钴(Co),硅(Si),镍(Ni),钼(Mo),铌(Nb),钯(Pd),钛(Ti),铼(Re),锇(Os) 铂(Pt),铝(Al),钌(Ru),铑(Rh),钒(V),锗(Ge),锡(Sn),镁(Mg),铁(Fe),铜(Cu) 钨(W),铪(Hf),碳(C),硼(B),钬(Ho),锑(Sb),镓(Ga),锰(Mn) 铋(Bi),锌(Zn),镱(Yb)及其组合。

    Low Resistance Area Magnetic Stack
    4.
    发明申请
    Low Resistance Area Magnetic Stack 有权
    低电阻磁性堆叠

    公开(公告)号:US20140154528A1

    公开(公告)日:2014-06-05

    申请号:US13690532

    申请日:2012-11-30

    Abstract: A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.

    Abstract translation: 磁性元件通常可以至少配置有具有设置在第一和第二铁磁层之间的多层阻挡结构的磁性堆叠。 多层阻挡结构可以具有设置在第一和第二合金层之间的二元化合物层,二元化合物具有金属元素和第二元素,其中至少一个合金层具有金属元素和与第二元素不同的第三元素。

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