NEAR FIELD TRANSDUCERS (NFTS) AND METHODS OF FORMING NFTS

    公开(公告)号:US20200224307A1

    公开(公告)日:2020-07-16

    申请号:US16726512

    申请日:2019-12-24

    Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

    DEVICES INCLUDING AT LEAST ONE MULTILAYER ADHESION LAYER

    公开(公告)号:US20190051319A1

    公开(公告)日:2019-02-14

    申请号:US16160661

    申请日:2018-10-15

    CPC classification number: G11B5/314 G11B5/3133 G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

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