公开(公告)号：US11637201B2

公开(公告)日：2023-04-25

申请号：US17456266

申请日：2021-11-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli Wu ,  Joseph Andrew Yedinak

IPC: H01L29/78 ,  H01L27/07 ,  H01L29/10

Abstract: A semiconductor device includes a region of semiconductor material of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is in the region of semiconductor material. The body region includes a stripe region; a first segment in the stripe region and having a first peak dopant concentration, a first depth into the region of semiconductor material, and a first length along the first major surface; and a second segment in the stripe region laterally adjacent to the first segment, adjacent to the first major surface, and having a second peak dopant concentration, a second depth into the region of semiconductor material, and a second length along the first major surface. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and configured to provide a second channel region in the second segment, and adjoins the first source region. A conductive structure is connected to the first segment, the second segment, and the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

公开(公告)号：US11222976B2

公开(公告)日：2022-01-11

申请号：US16947586

申请日：2020-08-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli Wu ,  Joseph Andrew Yedinak

IPC: H01L29/78 ,  H01L27/07 ,  H01L29/10

Abstract: A semiconductor device includes a region of semiconductor material comprising a semiconductor layer of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is disposed in the second semiconductor layer extending from the first major surface. The body region comprises a first segment having a first doping concentration, and a second segment laterally adjacent to the first segment and adjacent to the first major surface having a second doping concentration less than the first doping concentration. A source region of the first conductivity type is disposed in the first segment but is not disposed in at least a portion of the second segment. An insulated gate electrode is disposed adjacent to the region of semiconductor material adjoining the first segment, the second segment, and the source region. A conductive layer is electrically connected to the first segment, the second segment, and the first source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.