公开(公告)号：US12051967B2

公开(公告)日：2024-07-30

申请号：US17806597

申请日：2022-06-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dean E. Probst ,  Joseph Andrew Yedinak ,  Balaji Padmanabhan ,  Peter A Burke ,  Jeffery A. Neuls ,  Ashok Challa

IPC: H02M1/34 ,  H01L27/07

CPC classification number: H02M1/34 ,  H01L27/0727

Abstract: In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.

公开(公告)号：US20210320178A1

公开(公告)日：2021-10-14

申请号：US16847152

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US20220254889A1

公开(公告)日：2022-08-11

申请号：US17660691

申请日：2022-04-26

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/36

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US10784373B1

公开(公告)日：2020-09-22

申请号：US16515334

申请日：2019-07-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli Wu ,  Joseph Andrew Yedinak

IPC: H01L29/78 ,  H01L27/07 ,  H01L29/10

Abstract: A semiconductor device includes a region of semiconductor material comprising a semiconductor layer of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is disposed in the second semiconductor layer extending from the first major surface. The body region comprises a first segment having a first doping concentration, and a second segment laterally adjacent to the first segment and adjacent to the first major surface having a second doping concentration less than the first doping concentration. A source region of the first conductivity type is disposed in the first segment but is not disposed in at least a portion of the second segment. An insulated gate electrode is disposed adjacent to the region of semiconductor material adjoining the first segment, the second segment, and the source region. A conductive layer is electrically connected to the first segment, the second segment, and the first source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

公开(公告)号：US12272747B2

公开(公告)日：2025-04-08

申请号：US17643539

申请日：2021-12-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph Andrew Yedinak

IPC: H01L29/78 ,  H01L21/225 ,  H01L29/167 ,  H01L29/40 ,  H01L29/66

Abstract: In an aspect, an electronic device can include a substrate, a semiconductor layer overlying the substrate and including a mesa adjacent to a trench, and a doped region within the semiconductor layer. The doped region extends across an entire width of the mesa and contacts the lowermost point of the trench. A charge pocket can be located between an elevation of the peak concentration of the doped region and an elevation of the upper surface of the substrate. In another aspect, a process includes patterning a semiconductor layer to define a trench, forming a sacrificial layer within the trench, removing the sacrificial layer from a bottom of the trench, doping a portion of the semiconductor layer that is along the bottom of the trench while a remaining portion of the sacrificial layer is along a sidewall of the trench.

公开(公告)号：US12166090B2

公开(公告)日：2024-12-10

申请号：US17660691

申请日：2022-04-26

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US11342424B2

公开(公告)日：2022-05-24

申请号：US16847152

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/36

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US20250151323A1

公开(公告)日：2025-05-08

申请号：US19012520

申请日：2025-01-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph Andrew Yedinak

IPC: H10D30/66 ,  H01L21/225 ,  H10D30/01 ,  H10D62/834 ,  H10D64/00 ,  H10D84/00

Abstract: In an aspect, an electronic device can include a substrate, a semiconductor layer overlying the substrate and including a mesa adjacent to a trench, and a doped region within the semiconductor layer. The doped region extends across an entire width of the mesa and contacts the lowermost point of the trench. A charge pocket can be located between an elevation of the peak concentration of the doped region and an elevation of the upper surface of the substrate. In another aspect, a process includes patterning a semiconductor layer to define a trench, forming a sacrificial layer within the trench, removing the sacrificial layer from a bottom of the trench, doping a portion of the semiconductor layer that is along the bottom of the trench while a remaining portion of the sacrificial layer is along a sidewall of the trench.

公开(公告)号：US12027622B2

公开(公告)日：2024-07-02

申请号：US18188233

申请日：2023-03-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Xiaoli Wu ,  Joseph Andrew Yedinak

IPC: H01L29/78 ,  H01L27/07 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7835 ,  H01L27/0727 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7813

Abstract: A semiconductor device includes a region of semiconductor material of a first conductivity type. A body region of a second conductivity type is in the region of semiconductor material. The body region includes a first segment with a first peak dopant concentration, and a second segment laterally adjacent to the first segment with a second peak dopant concentration. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and is configured to provide a second channel region in the second segment, and adjoins the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

公开(公告)号：US20230187546A1

公开(公告)日：2023-06-15

申请号：US17643539

申请日：2021-12-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Joseph Andrew Yedinak

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/66734 ,  H01L29/7805 ,  H01L21/2253

Abstract: In an aspect, an electronic device can include a substrate, a semiconductor layer overlying the substrate and including a mesa adjacent to a trench, and a doped region within the semiconductor layer. The doped region extends across an entire width of the mesa and contacts the lowermost point of the trench. A charge pocket can be located between an elevation of the peak concentration of the doped region and an elevation of the upper surface of the substrate. In another aspect, a process includes patterning a semiconductor layer to define a trench, forming a sacrificial layer within the trench, removing the sacrificial layer from a bottom of the trench, doping a portion of the semiconductor layer that is along the bottom of the trench while a remaining portion of the sacrificial layer is along a sidewall of the trench.