公开(公告)号：US20160260844A1

公开(公告)日：2016-09-08

申请号：US14640240

申请日：2015-03-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir QUDDUS ,  Mihir MUDHOLKAR ,  Michael THOMASON

IPC: H01L29/872 ,  H01L29/66

CPC classification number: H01L29/8725 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66143

Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

Abstract translation: 在一个实施例中，沟槽肖特基整流器包括端接沟槽和设置在半导体层中的有源沟槽。 有源沟槽配置成比端接沟槽更浅的深度以提供沟槽深度差。 选择的沟槽深度差与半导体层的掺杂剂浓度，半导体层的厚度，有源沟槽宽度与终止沟槽宽度的一个或多个以及/或半导体层的掺杂物分布结合提供了一种具有改进的半导体器件的半导体器件 性能特点。