公开(公告)号：US10734487B2

公开(公告)日：2020-08-04

申请号：US16247631

申请日：2019-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Komagata ,  Naoki Okuno ,  Yutaka Okazaki ,  Hiroshi Fujiki

IPC: H01L27/12 ,  H01L29/20 ,  H01L29/423 ,  H01L29/786 ,  H01L29/221 ,  H01L29/10 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator over a substrate, an oxide over the first insulator, a second insulator over the oxide, a conductor overlapping with the oxide with the second insulator therebetween, a third insulator in contact with a top surface of the oxide, a fourth insulator in contact with a top surface of the third insulator, a side surface of the second insulator, and a side surface of the conductor, and a fifth insulator in contact with a side surface of the fourth insulator, a side surface of the third insulator, and the top surface of the oxide. The third insulator has a lower oxygen permeability than the fourth insulator.

公开(公告)号：US10600875B2

公开(公告)日：2020-03-24

申请号：US15628945

申请日：2017-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/788 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.