公开(公告)号：US20230132153A1

公开(公告)日：2023-04-27

申请号：US17942324

申请日：2022-09-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Anna Tada ,  Sachiko Kawakami ,  Daisuke Kubota ,  Kazuya Sugimoto ,  Yasuhiro Niikura ,  Akio Yamashita

IPC分类号： H01L51/00 ,  C07D209/88

摘要： Provided is a highly convenient, useful, or reliable novel organic compound represented by General Formula (G1), where A1 represents any of hydrogen, deuterium, an alkyl group having 1 to 13 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an aryl group having 6 to 25 carbon atoms, a heteroaryl group having 2 to 25 carbon atoms, and a diarylamino group; Ar1 to Ar4 each independently represent any of an aryl group having 6 to 25 carbon atoms, a heteroaryl group having 2 to 25 carbon atoms, and a diarylamino group; and R1 to R6 each independently represent any of hydrogen, deuterium, an alkyl group having 1 to 13 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an aryl group having 6 to 25 carbon atoms, a heteroaryl group having 2 to 25 carbon atoms, and an alkoxy group having 1 to 13 carbon atoms.

公开(公告)号：US10600875B2

公开(公告)日：2020-03-24

申请号：US15628945

申请日：2017-06-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/788 ,  H01L27/12 ,  H01L29/66

摘要： A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US09825181B2

公开(公告)日：2017-11-21

申请号：US15374356

申请日：2016-12-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Masashi Tsubuku ,  Kazuya Sugimoto ,  Tsutomu Murakawa ,  Motoki Nakashima ,  Shinpei Matsuda ,  Noritaka Ishihara ,  Daisuke Kurosaki ,  Toshimitsu Obonai ,  Hiroshi Kanemura ,  Junichi Koezuka

IPC分类号： H01L29/22 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H03K17/687 ,  H01L27/105 ,  G09G3/20

CPC分类号： H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

摘要： A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US10964787B2

公开(公告)日：2021-03-30

申请号：US16732686

申请日：2020-01-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/105 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49 ,  H01L29/24 ,  H01L29/788

摘要： A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.