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公开(公告)号:US20250151601A1
公开(公告)日:2025-05-08
申请号:US18684432
申请日:2022-08-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Yui YOSHIYASU , Kyoko TAKEDA , Masatoshi TAKABATAKE , Sachiko KAWAKAMI , Tsunenori SUZUKI , Toshiki SASAKI , Naoaki HASHIMOTO , Tomoya AOYAMA
IPC: H10K71/40 , C07F1/02 , C07F1/04 , C07F1/08 , C07F3/06 , C07F5/06 , C07F11/00 , C07F15/06 , H10K50/11 , H10K50/15 , H10K71/20 , H10K85/30 , H10K85/60 , H10K101/00 , H10K101/10 , H10K101/25 , H10K101/30
Abstract: The heat resistance of an organic semiconductor device including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer is improved. A heating step is performed after a layer containing an organometallic compound for a mask for an organic semiconductor layer, which is represented by General Formula (G1) below, is provided over the organic semiconductor layer. In General Formula (G1), Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents oxygen or sulfur, M represents a metal, n represents an integer greater than or equal to 1 and less than or equal to 5, and n is the same as the valence of the metal M. Note that when n is greater than or equal to 2, a plurality of Ars may be the same or different and Xs may be the same or different. When Ar represents the substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, a heteroatom of the heteroaryl group may be coordinated to the metal M.
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公开(公告)号:US20250040430A1
公开(公告)日:2025-01-30
申请号:US18887124
申请日:2024-09-17
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Naoaki HASHIMOTO , Satoshi SEO , Tsunenori SUZUKI , Yusuke TAKITA , Takumu OKUYAMA , Nobuharu OHSAWA , Shunpei YAMAZAKI , Toshiki SASAKI
IPC: H10K85/60 , H10K50/16 , H10K85/30 , H10K101/30
Abstract: A novel light-emitting device, a light-emitting device with high emission efficiency, a light-emitting device with a long lifetime, or a light-emitting device with low driving voltage is provided. An EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer contains a first organic compound and a second organic compound. The fourth layer contains a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. A HOMO level of the second organic compound is higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The fourth layer includes a region where the amount of seventh organic compound is large and a region where the amount of seventh organic compound is small in the thickness direction.
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13.
公开(公告)号:US20240251667A1
公开(公告)日:2024-07-25
申请号:US18585268
申请日:2024-02-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Kyoko TAKEDA , Harue OSAKA , Hiroshi KADOMA , Satoshi SEO , Tsunenori SUZUKI , Naoaki HASHIMOTO
IPC: H10K85/60 , C07D209/88 , C07D405/12 , C07D493/04 , C09K11/06 , H10K50/11
CPC classification number: H10K85/636 , C07D209/88 , C07D405/12 , C07D493/04 , C09K11/06 , H10K85/633 , C09K2211/1022 , H10K50/11 , H10K85/615 , H10K85/622 , H10K85/6572 , H10K85/6574
Abstract: A novel organic compound represented by General Formula (G1) is provided. In General Formula (G1), X1 and X2 each independently represent a secondary or tertiary alkyl group having 3 to 6 carbon atoms and having a branched carbon atom which is bonded to a phenyl group. In addition, Ar1 represents a substituted or unsubstituted condensed aromatic ring skeleton having 10 to 60 carbon atoms and composed of two or more rings or a substituted or unsubstituted condensed heteroaromatic ring skeleton having 8 to 60 carbon atoms and composed of two or more rings. Furthermore, Ar2 represents a substituted or unsubstituted aryl group having 6 to 25 carbon atoms. Moreover, n represents any of 1 to 3, and in the case where n is 2 or more, two or more groups bonded to Ar1 may be identical or different.
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14.
公开(公告)号:US20240164209A1
公开(公告)日:2024-05-16
申请号:US18420214
申请日:2024-01-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Satoshi SEO , Tsunenori SUZUKI , Naoaki HASHIMOTO
IPC: H10K85/60 , H10K50/11 , H10K50/155 , H10K50/16 , H10K50/84
CPC classification number: H10K85/6572 , H10K50/11 , H10K50/155 , H10K50/166 , H10K50/841 , H10K85/615 , H10K85/654 , H10K2101/40
Abstract: Provided is a novel light-emitting element, a light-emitting element with a long lifetime, or a light-emitting element with high emission efficiency. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer containing a fluorescent substance and a host material, a first electron-transport layer containing a first electron-transport material, and a second electron-transport layer containing a second electron-transport material, which are in contact with each other and in this order. The LUMO level of each of the host material and the second electron-transport material is higher than the LUMO level of the first electron-transport material.
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公开(公告)号:US20230138085A1
公开(公告)日:2023-05-04
申请号:US17907878
申请日:2021-03-12
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Sachiko KAWAKAMI , Naoaki HASHIMOTO , Satoshi SEO
IPC: H10K85/30
Abstract: A light-emitting device with a long lifetime is provided. A light-emitting device with a low driving voltage is provided. In the light-emitting device, an electron-transport layer includes an organometallic complex of an alkali metal and an organic compound having an electron-transport property; the organometallic complex and the organic compound form an exciplex in combination; a value (eV) obtained by converting into energy a peak wavelength of an emission spectrum of the exciplex formed with the organometallic complex and the organic compound having a mass ratio of 1:1 is smaller than a difference (eV) between a HOMO level of the organometallic complex and a LUMO level of the organic compound by greater than or equal to 0.1 eV.
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公开(公告)号:US20220149308A1
公开(公告)日:2022-05-12
申请号:US17431517
申请日:2020-02-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Satoshi SEO , Harue OSAKA , Naoaki HASHIMOTO , Shunpei YAMAZAKI
IPC: H01L51/50
Abstract: A light-emitting device with a long lifetime is provided. In a light-emitting device that includes an EL layer between a pair of electrodes, a light-emitting layer included in the EL layer has a functional stacked-layer structure, whereby the efficiency and reliability of the light-emitting device can be increased.
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公开(公告)号:US20220123251A1
公开(公告)日:2022-04-21
申请号:US17417497
申请日:2019-12-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Naoaki HASHIMOTO
Abstract: A novel light-emitting device is provided. A light-emitting device with favorable emission efficiency is provided. A light-emitting device with a favorable lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a light-emitting layer and an electron-transport layer. The electron-transport layer includes a first layer and a second layer in this order from the anode side. The first layer has a higher electron mobility than the second layer has. The electron mobility of the second layer in the case where the square root of the electric field strength [V/cm] is 600 is higher than or equal to 1×10−7 cm2/Vs and lower than or equal to 5×10−5 cm2/Vs. A degradation curve expressed as a change in luminance of light emission obtained when a certain amount of current flows through the light-emitting device is expressed by a monoexponential function.
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公开(公告)号:US20220077397A1
公开(公告)日:2022-03-10
申请号:US17416754
申请日:2019-12-17
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Naoaki HASHIMOTO , Satoshi SEO , Tsunenori SUZUKI , Yusuke TAKITA , Takumu OKUYAMA , Nobuharu OHSAWA , Shunpei YAMAZAKI , Toshiki SASAKI
IPC: H01L51/00
Abstract: A novel light-emitting device, a light-emitting device with high emission efficiency, a light-emitting device with a long lifetime, or a light-emitting device with low driving voltage is provided. An EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer contains a first organic compound and a second organic compound. The fourth layer contains a seventh organic compound. The first organic compound exhibits an electron-accepting property with respect to the second organic compound. A HOMO level of the second organic compound is higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The fourth layer includes a region where the amount of seventh organic compound is large and a region where the amount of seventh organic compound is small in the thickness direction.
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公开(公告)号:US20210391553A1
公开(公告)日:2021-12-16
申请号:US17356716
申请日:2021-06-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Naoaki HASHIMOTO , Tsunenori SUZUKI , Satoshi SEO , Hiromi SEO , Hiromitsu KIDO
Abstract: A light-emitting element that includes a fluorescent material and has a high emission efficiency is provided. A light-emitting element in which a delayed fluorescence component due to TTA accounts for a high proportion of emissive components is provided. A novel light-emitting device with a high emission efficiency and a low power consumption is provided. A light-emitting element includes an anode, a cathode, and an EL layer. The EL layer includes a light-emitting layer including a host material and an electron-transport layer including a first material in contact with the light-emitting layer. The LUMO level of the first material is lower than that of the host material. The proportion of a delayed fluorescence component due to TTA is greater than or equal to 10 percent of the light emission from the EL layer. The proportion of the delayed fluorescence component due to TTA may be greater than or equal to 15 percent of the light emission.
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公开(公告)号:US20210367165A1
公开(公告)日:2021-11-25
申请号:US17392842
申请日:2021-08-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Satoshi Seo , Tsunenori SUZUKI , Naoaki HASHIMOTO
Abstract: Provided is a novel light-emitting element, a light-emitting element with a long lifetime, or a light-emitting element with high emission efficiency. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer containing a fluorescent substance and a host material, a first electron-transport layer containing a first electron-transport material, and a second electron-transport layer containing a second electron-transport material, which are in contact with each other and in this order. The LUMO level of each of the host material and the second electron-transport material is higher than the LUMO level of the first electron-transport material.
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