公开(公告)号：US09478690B2

公开(公告)日：2016-10-25

申请号：US14922946

申请日：2015-10-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon Park ,  Hwa Mok Kim ,  Kyu Ho Lee ,  Sung Hyun Lee ,  Hyung Kyu Kim

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/108 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/108 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1013 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544

Abstract: A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的光吸收层和设置在光吸收层上的肖特基结层。 根据光检测装置的光致发光（PL）特性测量，第一峰值光强度大于第二峰值光强度，第一峰值光强度是从光吸收层发射的光的峰值光强度， 并且第二峰值光强度是从第一氮化物层发射的光的峰值光强度。

公开(公告)号：US09171986B2

公开(公告)日：2015-10-27

申请号：US14496998

申请日：2014-09-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon Park ,  Hwa Mok Kim ,  Kyu Ho Lee ,  Sung Hyun Lee ,  Hyung Kyu Kim

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/108 ,  H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/108 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure.

Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的低电流阻挡层，设置在低电流阻挡层上的光吸收层和设置在光吸收层上的肖特基结层。 低电流阻挡层包括多层结构。