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公开(公告)号:US11997860B2
公开(公告)日:2024-05-28
申请号:US17978252
申请日:2022-11-01
发明人: Satoshi Seo
IPC分类号: H10K50/11 , C09K11/02 , C09K11/06 , H10K50/00 , H10K50/12 , H10K50/15 , H10K50/16 , H10K50/17 , H10K85/30 , H10K85/60 , H01L31/0232 , H10K101/00 , H10K101/10 , H10K101/30 , H10K101/40 , H10K102/00
CPC分类号: H10K50/11 , C09K11/02 , C09K11/06 , H10K50/00 , H10K50/121 , H10K50/15 , H10K50/16 , H10K50/171 , H10K85/30 , H10K85/346 , H10K85/654 , H10K85/6572 , C09K2211/1007 , C09K2211/1029 , C09K2211/1059 , C09K2211/185 , C09K2211/188 , H01L31/02322 , H10K50/17 , H10K85/649 , H10K2101/10 , H10K2101/27 , H10K2101/30 , H10K2101/40 , H10K2102/00
摘要: Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.
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公开(公告)号:US11894473B2
公开(公告)日:2024-02-06
申请号:US17363305
申请日:2021-09-09
发明人: Ruei Chi Chen , Chih Lin Yang
IPC分类号: H01L31/0232 , B81C1/00 , B81B7/00
CPC分类号: H01L31/02322 , B81B7/0077 , B81C1/00269 , H01L31/02325 , B81B2201/0285 , B81B2201/0292 , B81C2203/0109 , B81C2203/032
摘要: The invention relates to a sensing module and a manufacturing method thereof, which firstly provides a transparent substrate, and then a sensor, a colloid, and an optical cover body disposed on a first surface of the transparent substrate. The colloid is surrounded the encrypted chip and is connected with the transparent substrate and the optical cover. Finally, a light source irradiates the colloid through a second surface of the transparent substrate to cure the colloid for obtaining the sensing module.
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公开(公告)号:US11876142B2
公开(公告)日:2024-01-16
申请号:US16837189
申请日:2020-04-01
申请人: Sunflare Co
发明人: Liang Gao , Zhun Zhang , Yu-Ting Lin
IPC分类号: H01L31/032 , C23C14/18 , C23C14/35 , C23C14/58 , H01L31/0224 , H01L31/0232 , H01L31/103 , H01L31/173 , H01L31/18
CPC分类号: H01L31/0322 , C23C14/18 , C23C14/35 , C23C14/5806 , H01L31/02322 , H01L31/022466 , H01L31/103 , H01L31/173 , H01L31/1864
摘要: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1-x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.
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公开(公告)号:US20230352617A1
公开(公告)日:2023-11-02
申请号:US18212935
申请日:2023-06-22
发明人: Karl Weidner , Ralph Wirth , Axel Kaltenbacher , Walter Wegleiter , Bernd Barchmann , Oliver Wutz , Jan Marfeld
IPC分类号: H01L33/00 , H01L33/48 , H01L33/62 , H01L25/075 , H01L23/31 , H01L31/0232 , H01L33/60 , H01L31/0203 , H01L33/56 , H01L25/04 , H01L31/02 , H01L33/50 , H01L31/18
CPC分类号: H01L33/0093 , H01L33/486 , H01L33/62 , H01L25/0753 , H01L23/3185 , H01L31/0232 , H01L33/60 , H01L31/0203 , H01L31/02327 , H01L33/483 , H01L33/56 , H01L23/3107 , H01L25/042 , H01L31/02005 , H01L33/502 , H01L31/02322 , H01L31/1892 , H01L33/54
摘要: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.
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公开(公告)号:US20190157524A1
公开(公告)日:2019-05-23
申请号:US16240584
申请日:2019-01-04
发明人: Markus PINDL , Thomas SCHWARZ , Frank SINGER , Sandra SOBCZYK
IPC分类号: H01L33/54 , H01L31/0203 , H01L31/0232 , H01L31/18 , H01L33/00 , H01L33/50
CPC分类号: H01L33/54 , H01L21/568 , H01L31/0203 , H01L31/02322 , H01L31/186 , H01L33/0095 , H01L33/486 , H01L33/502 , H01L33/505 , H01L33/56 , H01L2224/18 , H01L2224/24 , H01L2224/2518 , H01L2224/82 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
摘要: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.
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公开(公告)号:US20180284299A1
公开(公告)日:2018-10-04
申请号:US15939096
申请日:2018-03-28
发明人: Paolo CREMA , Alessandro FREGUGLIA , Piero FALLICA
IPC分类号: G01T1/208 , G01T1/20 , G01T1/202 , H01L31/0203
CPC分类号: G01T1/208 , G01T1/2002 , G01T1/2018 , G01T1/202 , G01T7/00 , H01L31/0203 , H01L31/02322 , H01L31/085 , H01L31/107
摘要: A radiation scintillator detector comprising a substrate on which are arranged a scintillator module and a silicon photomultiplier optically coupled one to the other. The detector includes a package comprising an outer casing enclosing said scintillator module and said photomultiplier, said package comprising inside said outer casing an inner casing comprising resin reflecting photons, in particular infrared and/or visible photons, emitted by said scintillator module upon receiving a ionizing radiation, enclosing said scintillator module and said photomultiplier.
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公开(公告)号:US10061036B2
公开(公告)日:2018-08-28
申请号:US15547650
申请日:2016-01-08
申请人: SONY CORPORATION
IPC分类号: G01T1/20 , H01L27/146
CPC分类号: G01T1/2018 , H01L27/14623 , H01L27/14663 , H01L27/14685 , H01L27/14689 , H01L31/02322 , H01L31/085 , H01L31/102
摘要: A radiation detector includes a substrate, a plurality of device sections each disposed separately from the substrate and each including a photoelectric conversion device, a buried layer formed in a region between the device sections, and a wavelength conversion layer that is formed on the plurality of device sections and converts entered radiation into light. Any of the device sections includes a first surface that faces the wavelength conversion layer, and a second surface that faces the substrate, and an upper end of the buried layer is disposed at a position higher than the second surface of the any of the device sections.
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公开(公告)号:US20180097157A1
公开(公告)日:2018-04-05
申请号:US15720352
申请日:2017-09-29
发明人: Grigory Simin , Michael Shur , Alexander Dobrinsky
IPC分类号: H01L33/58 , H01L33/08 , H01L31/0236 , H01L31/0232
CPC分类号: H01L33/58 , H01L31/0232 , H01L31/02322 , H01L31/0236 , H01L31/035236 , H01L31/1013 , H01L31/12 , H01L33/08 , H01L33/32
摘要: A semiconductor heterostructure for an optoelectronic device includes a base semiconductor layer having one or more semiconductor heterostructure mesas located thereon. One or more of the mesas can include a set of active regions having multiple main peaks of radiative recombination at differing wavelengths. For example, a mesa can include two or more active regions, each of which has a different wavelength for the corresponding main peak of radiative recombination. The active regions can be configured to be operated simultaneously or can be capable of independent operation. A system can include one or more optoelectronic devices, each of which can be operated as an emitter or a detector.
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公开(公告)号:US20180035061A1
公开(公告)日:2018-02-01
申请号:US15222786
申请日:2016-07-28
发明人: Xinqiao Liu , Boyd Fowler
IPC分类号: H04N5/33 , H01L31/0232 , H01L27/146 , H04N5/374 , H04N5/378
CPC分类号: H04N5/332 , H01L27/1463 , H01L27/14636 , H01L27/14645 , H01L27/14649 , H01L27/14689 , H01L31/02322 , H04N5/374 , H04N5/3745 , H04N5/378
摘要: An imaging array and method for fabricating the same are disclosed. The imaging array includes a semiconductor substrate having a plurality of VIS pixel sensors and a plurality of SWIR readout circuits fabricated therein. An insulating layer is deposited on the semiconductor substrate. The insulating array has wells overlying the SWIR pixel sensors. A plurality of SWIR photodiodes are deposited in the wells. Each SWIR photodiode is located in a corresponding one of the wells and is connected by an electrically conducting path with the SWIR readout circuit underlying the SWIR photodiode. An electrically conducting transparent electrode overlying the SWIR photodiodes is connected to each of the SWIR photodiodes.
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公开(公告)号:US20170365588A1
公开(公告)日:2017-12-21
申请号:US15624484
申请日:2017-06-15
发明人: Hsien-Te CHEN
IPC分类号: H01L25/16 , H01L33/50 , H01L33/36 , H01L33/00 , H01L31/0232 , H01L31/0224 , H01L31/02 , H01L27/12 , H01L33/62 , H01L31/173 , G06K9/00
CPC分类号: H01L25/167 , G06K9/0004 , H01L25/0753 , H01L27/1214 , H01L31/02005 , H01L31/022408 , H01L31/02322 , H01L31/02327 , H01L31/173 , H01L33/0095 , H01L33/36 , H01L33/505 , H01L33/62
摘要: An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 μm.
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