公开(公告)号：US09018027B2

公开(公告)日：2015-04-28

申请号：US13950958

申请日：2013-07-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk Im ,  Chang Yeon Kim ,  Young Wug Kim

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L21/0254 ,  H01L33/0079 ,  H01L33/32

Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.

Abstract translation: 一种制造基于氮化镓（GaN）的半导体器件的方法。 该方法包括制备具有下表面和上表面的GaN衬底; 在GaN衬底的上表面上生长GaN基半导体层以形成半导体堆叠; 在所述半导体堆叠上形成支撑衬底; 以及将GaN衬底与半导体堆叠分离。 GaN衬底的分离包括从GaN衬底的下表面照射激光。 激光穿过GaN衬底的下表面并在由GaN衬底和半导体堆叠构成的结构内形成激光吸收区。