公开(公告)号：US20220325418A1

公开(公告)日：2022-10-13

申请号：US17607933

申请日：2020-04-17

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: C23F1/12 ,  C23F1/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/465

Abstract: A metal removal method which includes: a reaction step of bringing a treatment gas containing a fluorine-containing interhalogen compound and a metal-containing material containing a metal element into contact with each other to generate metal fluoride which is a reaction product of the fluorine-containing interhalogen compound and the metal element; and a volatilization step of heating the metal fluoride under an inert gas atmosphere or in a vacuum environment for volatilization. The metal element is at least one kind selected from iron, cobalt, nickel, selenium, molybdenum, rhodium, palladium, tungsten, rhenium, iridium, and platinum. Also disclosed is a dry etching method using the metal removal method and a production method for a semiconductor element using the dry etching method.

公开(公告)号：US20220193597A1

公开(公告)日：2022-06-23

申请号：US17595409

申请日：2020-07-16

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: B01D53/04

Abstract: Provided are a gas treatment method and a gas treatment device capable of efficiently removing a bromofluoroethylene. A gas containing a bromofluoroethylene is brought into contact with an adsorbent (7) having pores with an average pore diameter of 0.4 nm or more and 4 nm or less in a temperature environment of not less than 0° C. and less than 120° C. to allow the adsorbent (7) to adsorb the bromofluoroethylene, and thus the bromofluoroethylene is separated from the gas.