公开(公告)号：US20240038546A1

公开(公告)日：2024-02-01

申请号：US18012445

申请日：2021-06-24

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI ,  Yuki OKA

IPC: H01L21/3213 ,  H01J37/32 ,  G03F7/36 ,  C09K13/00

CPC classification number: H01L21/32136 ,  H01J37/32422 ,  G03F7/36 ,  C09K13/00 ,  H01J2237/3346

Abstract: There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

公开(公告)号：US20230290643A1

公开(公告)日：2023-09-14

申请号：US18009300

申请日：2021-05-27

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: H01L21/311 ,  H01J37/32 ,  C09K13/00

CPC classification number: H01L21/31116 ,  C09K13/00 ,  H01J37/32816 ,  H01J2237/3346

Abstract: An etching method including an etching step of bringing, in the presence of plasma, an etching gas containing a fluorine compound with three or fewer carbon atoms having at least one bond of a carbon-oxygen double bond and an ether bond in a molecule into contact with a target etching member having an etching target and a non-etching target, and selectively etching the etching target in comparison with the non-etching target. A concentration of the fluorine compound in the etching gas is 0.5 vol% or more to 40 vol% or less, and the etching target has silicon nitride.

公开(公告)号：US20220230888A1

公开(公告)日：2022-07-21

申请号：US17595585

申请日：2021-02-08

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: H01L21/311 ,  H01L21/3213 ,  B08B9/08

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride, which is a compound of bromine or iodine and fluorine, is brought into contact with a member to be etched (12) having an etching object, which is an object to be etched by the etching gas, thereby etching the etching object without using plasma. The etching object contains at least one metal selected from among titanium, indium, and tin. Also disclosed is a production method for manufacturing a semiconductor element using the dry etching method as well as a cleaning method for cleaning an inner surface of a chamber of a semiconductor element manufacturing apparatus using the dry etching method.

公开(公告)号：US20220054972A1

公开(公告)日：2022-02-24

申请号：US17416807

申请日：2019-12-09

Applicant: SHOWA DENKO K.K.

Inventor： Atsushi SUZUKI ,  Kazuma MATSUI

IPC: B01D53/14 ,  B01D53/30 ,  B01D53/68

Abstract: A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.

公开(公告)号：US20220216063A1

公开(公告)日：2022-07-07

申请号：US17595397

申请日：2021-03-25

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: H01L21/311

Abstract: Provided is an etching method capable of selectively etching an etching target containing a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom with respect to a specific non-etching target without using plasma. The etching method includes an etching step in which an etching gas containing fluorine gas is brought into contact with a member to be etched including an etching target and a non-etching target in the absence of plasma to selectively etch the etching target with respect to the non-etching target. The etching target contains a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom. The non-etching target includes at least one selected from tantalum, cobalt, copper, titanium nitride, nickel, and amorphous carbon. The etching step is performed under temperature conditions of from 40° C. to less than 350° C.

公开(公告)号：US20220216062A1

公开(公告)日：2022-07-07

申请号：US17595351

申请日：2020-10-12

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: H01L21/306 ,  H01L21/311

Abstract: There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object (12) containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object (12) without using plasma under a pressure of 1 Pa to 80 kPa.

公开(公告)号：US20220199419A1

公开(公告)日：2022-06-23

申请号：US17595416

申请日：2021-01-12

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: H01L21/311

Abstract: An etching method capable of selectively etching an oxide, which method includes an etching step in which an etching target (12) including an oxide is placed in a chamber (10), and the oxide included in the etching target (12) is etched in the chamber (10) using an etching gas containing a fluorine-containing compound including a functional group represented by the chemical formula below: wherein a symbol * means a bonding point with another atom or atomic group. The oxide is at least one of a metal oxide or a semimetal oxide. Further, in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber (10).

公开(公告)号：US20220243128A1

公开(公告)日：2022-08-04

申请号：US17611607

申请日：2021-01-12

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: C09K13/00 ,  B08B3/08

Abstract: A method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass % or more.

公开(公告)号：US20230154763A1

公开(公告)日：2023-05-18

申请号：US17612774

申请日：2021-04-30

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: H01L21/3213 ,  B08B9/08 ,  C23F1/12

CPC classification number: H01L21/32136 ,  B08B9/08 ,  C23F1/12 ,  B08B2209/08

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

公开(公告)号：US20220219982A1

公开(公告)日：2022-07-14

申请号：US17610187

申请日：2020-09-10

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI

IPC: C01B7/24 ,  B01J19/24 ,  B01J19/14 ,  B01J21/04 ,  B01J27/128 ,  B01J20/04 ,  B01D53/00 ,  B01D53/04

Abstract: There is provided a method for producing high-purity bromine pentafluoride while leaving a less amount of an unreacted fluorine gas. The method for producing bromine pentafluoride includes a reaction step of feeding a bromine-containing compound, which is at least one of a bromine gas and bromine trifluoride, and a fluorine gas to a reactor to give a (fluorine atom):(bromine atom) molar ratio, that is, F/Br of 3.0 or more and 4.7 or less and reacting the bromine-containing compound and the fluorine gas to each other to obtain a reaction mixture containing bromine pentafluoride and bromine trifluoride; and a separation step of separating bromine pentafluoride and bromine trifluoride in the reaction mixture from each other.