公开(公告)号：US20180059181A1

公开(公告)日：2018-03-01

申请号：US15471866

申请日：2017-03-28

Applicant: SK hynix Inc.

Inventor： Tae Kyun SHIN ,  Young Bo SHIM

IPC: G01R31/317 ,  G01R31/3177

CPC classification number: G01R31/31703 ,  G01R31/31701 ,  G01R31/31722 ,  G01R31/3177

Abstract: A semiconductor device may be provided. The semiconductor device may include a latch comparison circuit configured for generating a latched address by latching a pattern signal inputted through an address, and generate a comparison signal by comparing a pattern signal inputted through the address and the latched address. The semiconductor device may include a failure flag generation circuit configured for generating a failure flag signal based on the comparison signal.