公开(公告)号：US20220115389A1

公开(公告)日：2022-04-14

申请号：US17556910

申请日：2021-12-20

Applicant: SOCIONEXT INC.

Inventor： Masanobu Hirose

IPC: H01L27/11 ,  G11C11/412 ,  G11C5/02 ,  G11C5/06 ,  H01L29/06

Abstract: Transistors (N3, N4) corresponding to a drive transistor (PD1), transistors (N5, N6) corresponding to a drive transistor (PD2), transistors (N7, N8) corresponding to an access transistor (PG1), and transistors (N1, N2) corresponding to an access transistor (PG2) are formed in a lower portion of a cell. Transistors (P1, P2) corresponding to load transistors (PU1, PU2), respectively, are formed in an upper portion of the cell. Further, the transistors (P1, P2) overlap the transistors (N3, N6) in plan view.