公开(公告)号：US20190051620A1

公开(公告)日：2019-02-14

申请号：US16158611

申请日：2018-10-12

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L21/78 ,  H01L23/522 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

公开(公告)号：US09881878B2

公开(公告)日：2018-01-30

申请号：US15274787

申请日：2016-09-23

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.