公开(公告)号：US12205996B2

公开(公告)日：2025-01-21

申请号：US17766406

申请日：2020-08-18

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Huajun Jin ,  Guipeng Sun

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: The present invention relates to an LDMOS device and a method of forming the device, in which a barrier layer includes n etch stop layers. Insulating layers are formed between adjacent etch stop layers. Since an interlayer dielectric layer and the insulating layers are both oxides that differ from the material of the etch stop layers, etching processes can be stopped at the n etch stop layers when they are proceeding in the oxides, thus forming n field plate holes terminating at the respective n etch stop layers. A lower end of the first field plate hole proximal to a gate structure is closest to a drift region, and a lower end of the n-th field plate hole proximal to a drain region is farthest from the drift region. With this arrangement, more uniform electric field strength can be obtained around front and rear ends of the drift region, resulting in an effectively improved electric field distribution throughout the drift region and thus in an increased breakdown voltage.

公开(公告)号：US20210242305A1

公开(公告)日：2021-08-05

申请号：US17265565

申请日：2019-08-09

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Huajun Jin ,  Guipeng Sun

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L21/225 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

Abstract: A semiconductor device comprises: a substrate; a well region provided in the substrate, having a second conductivity type; source regions having a first conductivity type; body tile regions having the second conductivity type, the source regions and the body tie regions being alternately arranged in a conductive channel width direction so as to form a first region extending along the conductive channel width direction, and a boundary where the edges of the source regions and the edges of the body tie regions are alternately arranged being formed on two sides of the first region; and a conductive auxiliary region having the first conductivity type, provided on at least one side of the first region, and directly contacting the boundary, a contact part comprising the edge of at least one source region on the boundary and the edge of at least one body tie region on the boundary.