公开(公告)号：US20220336520A1

公开(公告)日：2022-10-20

申请号：US17855521

申请日：2022-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

IPC: H01L27/146

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

公开(公告)号：US20210343766A1

公开(公告)日：2021-11-04

申请号：US17225329

申请日：2021-04-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Boris RODRIGUES GONCALVES ,  Frederic LALANNE

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/378

Abstract: A pixel includes a photoconversion zone, an insulated vertical electrode and at least one charge storage zone. The photoconversion zone belongs to a first part of a semiconductor substrate and each charge storage zone belongs to a second part of the substrate physically separated from the first part of the substrate by the insulated vertical electrode.

公开(公告)号：US20200350355A1

公开(公告)日：2020-11-05

申请号：US16862316

申请日：2020-04-29

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Crolles 2) SAS

Inventor： Jeff M. RAYNOR ,  Frederic LALANNE ,  Pierre MALINGE

IPC: H01L27/146 ,  H04N5/3745

Abstract: The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.

公开(公告)号：US20190252457A1

公开(公告)日：2019-08-15

申请号：US16270989

申请日：2019-02-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic LALANNE ,  Laurent GAY ,  Pascal FONTENEAU ,  Yann HENRION ,  Francois GUYADER

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/30625 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.