中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.017 seconds)

    ELECTRONIC IC DEVICE COMPRISING INTEGRATED OPTICAL AND ELECTRONIC CIRCUIT COMPONENT AND FABRICATION METHOD
    3.
    发明申请
    ELECTRONIC IC DEVICE COMPRISING INTEGRATED OPTICAL AND ELECTRONIC CIRCUIT COMPONENT AND FABRICATION METHOD 有权

    公开(公告)号：US20210074618A1

    公开(公告)日：2021-03-11

    申请号：US17015634

    申请日：2020-09-09

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Jean-Pierre CARRERE ,  Francois GUYADER

    IPC: H01L23/498 ,  H01L21/48 ,  H01L31/02

    Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

    BACK-SIDE ILLUMINATED IMAGE SENSOR
    4.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR 有权

    公开(公告)号：US20220336520A1

    公开(公告)日：2022-10-20

    申请号：US17855521

    申请日：2022-06-30

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

    PHOTOGRAPHIC SENSOR
    7.
    发明申请
    PHOTOGRAPHIC SENSOR 有权

    公开(公告)号：US20220344385A1

    公开(公告)日：2022-10-27

    申请号：US17724739

    申请日：2022-04-20

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois GUYADER

    IPC: H01L27/146

    Abstract: A semiconductor substrate includes a matrix of photosites. Each photosite is delimited by an isolation trench including polycrystalline silicon. A peripheral zone extends directly around the matrix of photosites. The peripheral zone includes dummy photosites delimited by isolation trenches including polycrystalline silicon. A density of polycrystalline silicon in the peripheral zone is between a density of polycrystalline silicon at an edge of the matrix of photosites and a density of polycrystalline silicon around the peripheral zone.

    BACK-SIDE ILLUMINATED IMAGE SENSOR
    9.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR 有权

    公开(公告)号：US20210288102A1

    公开(公告)日：2021-09-16

    申请号：US17327364

    申请日：2021-05-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic LALANNE ,  Laurent GAY ,  Pascal FONTENEAU ,  Yann HENRION ,  Francois GUYADER

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

    BACK-SIDE ILLUMINATED IMAGE SENSOR
    10.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR 审中-公开

    公开(公告)号：US20200227451A1

    公开(公告)日：2020-07-16

    申请号：US16740050

    申请日：2020-01-10

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

Patent Agency Ranking