公开(公告)号：US20240204029A1

公开(公告)日：2024-06-20

申请号：US18536511

申请日：2023-12-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent GAY ,  Magali GREGOIRE ,  Bilel SAIDI ,  Sylvain JOBLOT ,  Benjamin VIANNE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/14683

Abstract: An image sensor includes photodetection pixels formed inside and on top of a semiconductor substrate. An interconnection network coats a surface of the semiconductor substrate. The interconnection network includes a level of conductive vias in contact, by their lower surface, with the photodetection pixels. The conductive vias are made of doped polysilicon and have a heavier doping on their lower surface side than on their upper surface side.

公开(公告)号：US20210288102A1

公开(公告)日：2021-09-16

申请号：US17327364

申请日：2021-05-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic LALANNE ,  Laurent GAY ,  Pascal FONTENEAU ,  Yann HENRION ,  Francois GUYADER

IPC: H01L27/146

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

公开(公告)号：US20200227451A1

公开(公告)日：2020-07-16

申请号：US16740050

申请日：2020-01-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

IPC: H01L27/146

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

公开(公告)号：US20220336520A1

公开(公告)日：2022-10-20

申请号：US17855521

申请日：2022-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

IPC: H01L27/146

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

公开(公告)号：US20190252457A1

公开(公告)日：2019-08-15

申请号：US16270989

申请日：2019-02-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic LALANNE ,  Laurent GAY ,  Pascal FONTENEAU ,  Yann HENRION ,  Francois GUYADER

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/30625 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.