公开(公告)号：US20240023467A1

公开(公告)日：2024-01-18

申请号：US18186103

申请日：2023-03-17

Applicant: STMicroelectronics (Crolles 2) SAS ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stephane MONFRAY ,  Alain FLEURY ,  Bruno REIG

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/861 ,  H10N70/231 ,  H10N70/823 ,  H10N70/063 ,  H10N70/8828

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

公开(公告)号：US20230378295A1

公开(公告)日：2023-11-23

申请号：US18197909

申请日：2023-05-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Siddhartha DHAR ,  Stephane MONFRAY ,  Alain FLEURY ,  Franck JULIEN

IPC: H01L29/423 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/40

CPC classification number: H01L29/42368 ,  H01L27/088 ,  H01L21/823462 ,  H01L29/401

Abstract: A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.

公开(公告)号：US20190250124A1

公开(公告)日：2019-08-15

申请号：US16275051

申请日：2019-02-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Getenet Tesega AYELE ,  Stephane MONFRAY

IPC: G01N27/414 ,  H01L23/522 ,  H01L29/423 ,  H01L21/768 ,  G01N27/416

Abstract: A detection stage of an electronic detection device, for example a pH meter, includes an insulating region that receives an element to be analyzed. The insulating region is positioned on a sensing conductive region. A biasing stage includes an electrically conductive region which is capacitively coupled to the conductive region. The electrically conductive region is formed in an uppermost metallization level along with a further conductive region. That further conductive region is electrically connected to the sensing conductive region by a via passing through an insulating layer which insulates the electrically conductive region from the sensing conductive region.

公开(公告)号：US20190219847A1

公开(公告)日：2019-07-18

申请号：US16247096

申请日：2019-01-14

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane MONFRAY

IPC: G02F1/025

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.