公开(公告)号：US20220375840A1

公开(公告)日：2022-11-24

申请号：US17744397

申请日：2022-05-13

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Olivier ORY ,  Michael DE CRUZ

IPC: H01L23/498 ,  H01L23/00

Abstract: The present disclosure relates to an electronic chip comprising a semiconductor substrate carrying at least one metal contact extending, within the thickness of the substrate, along at least one flank of the chip.

公开(公告)号：US20210175094A1

公开(公告)日：2021-06-10

申请号：US17104869

申请日：2020-11-25

Applicant: STMicroelectronics (Tours) SAS

Inventor： Michael DE CRUZ ,  Olivier ORY

IPC: H01L21/48 ,  H01L21/56

Abstract: A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

公开(公告)号：US20200273767A1

公开(公告)日：2020-08-27

申请号：US16802325

申请日：2020-02-26

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Olivier ORY

IPC: H01L23/31 ,  H01L29/861 ,  H01L21/3205 ,  H01L21/56 ,  H01L21/78

Abstract: A device comprising a semiconductor substrate, an electrically-conductive layer covering the substrate, and an insulating sheath, the conductive layer being in contact with the insulating sheath on the side opposite to the substrate.