公开(公告)号：US11881169B2

公开(公告)日：2024-01-23

申请号：US17970261

申请日：2022-10-20

Applicant: Samsung Display Co., Ltd.

Inventor： Soongi Kwon ,  Wonkyu Kwak ,  Jihyun Ka ,  Chulkyu Kang ,  Yangwan Kim ,  Kimyeong Eom ,  Kyonghwan Oh ,  Minku Lee ,  Jintae Jeong

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861

Abstract: A pixel capable of adjusting a threshold voltage of a driving transistor, the pixel including: a display element configured to emit light during an emission period and including an anode and a cathode, the first transistor including an upper gate and a lower gate and configured to control a magnitude of a driving current flowing to the display element, a storage capacitor connected to the upper gate of the first transistor, and a second transistor configured to be turned on during a data writing period to transmit a data voltage to the first transistor, wherein a lower gate-source voltage of the first transistor has a first voltage level in the data writing period and a second voltage level in the emission period.

公开(公告)号：US11832480B2

公开(公告)日：2023-11-28

申请号：US16988896

申请日：2020-08-10

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Sangmoo Choi ,  Wonkyu Kwak ,  Jinwoo Park ,  Dongsun Lee

IPC: G09G3/32 ,  H10K59/121 ,  G09G3/3233 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K77/10 ,  H01L29/786 ,  H01L27/12 ,  H10K102/00

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/123 ,  H10K59/124 ,  H10K59/1216 ,  H10K59/131 ,  H10K77/111 ,  G09G2300/0426 ,  G09G2320/0242 ,  G09G2330/021 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78675 ,  H10K2102/311

Abstract: A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

公开(公告)号：US20200243633A1

公开(公告)日：2020-07-30

申请号：US16851023

申请日：2020-04-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H01L27/32

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US20190280076A1

公开(公告)日：2019-09-12

申请号：US16250090

申请日：2019-01-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyunchol Bang ,  Chulkyu Kang ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H01L27/32

Abstract: A display apparatus includes a first transistor, a first data line, a second data line, a driving voltage line, and a first insulating layer. The first transistor includes a first semiconductor layer and a first gate electrode. The first semiconductor layer includes a source region and a drain region. The first data line is disposed at a left side of the first transistor, and the second data line is disposed at a right side of the first transistor. The driving voltage line at least partially overlaps the first data line and the second data line. The first insulating layer is disposed between the first data line and the driving voltage line and between the second data line and the driving voltage line.

公开(公告)号：US20190252479A1

公开(公告)日：2019-08-15

申请号：US16275192

申请日：2019-02-13

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H01L27/32

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US20240389410A1

公开(公告)日：2024-11-21

申请号：US18581860

申请日：2024-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Donghyun Kim ,  Sujin Kim ,  Chulkyu Kang ,  Seonkyoon Mok

IPC: H10K59/131 ,  H10K59/121

Abstract: A display apparatus includes a first conductive line, a first electrode arranged on the first conductive line and overlapping the first conductive line, a semiconductor layer arranged on the first electrode and overlapping the first electrode, a second electrode arranged on the semiconductor layer and overlapping the first electrode, and a third electrode arranged on the second electrode, overlapping the second electrode, and electrically connected to the semiconductor layer and the first electrode. An area of the semiconductor layer which overlaps the second electrode, overlaps the first conductive line.

公开(公告)号：US12144203B2

公开(公告)日：2024-11-12

申请号：US17705434

申请日：2022-03-28

Applicant: Samsung Display Co., Ltd.

Inventor： Chulkyu Kang ,  Kiwook Kim ,  Jinwoo Park ,  Dongsun Lee ,  Sangmoo Choi

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

Abstract: A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

公开(公告)号：US11950460B2

公开(公告)日：2024-04-02

申请号：US18161434

申请日：2023-01-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Nayun Kwak ,  Chulkyu Kang ,  Daesuk Kim ,  Ilgoo Youn ,  Dongsun Lee ,  Soyoung Lee ,  Jieun Lee ,  Junyoung Jo ,  Minhee Choi

IPC: G09G3/3233 ,  H01L27/12 ,  H10K59/124 ,  H10K59/126 ,  H10K59/131

CPC classification number: H10K59/126 ,  G09G3/3233 ,  H01L27/1237 ,  H10K59/124 ,  H10K59/131 ,  G09G2300/0426 ,  G09G2300/0819

Abstract: A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

公开(公告)号：US20230335062A1

公开(公告)日：2023-10-19

申请号：US18128956

申请日：2023-03-30

Applicant: Samsung Display Co., Ltd.

Inventor： Haijung In ,  Chulkyu Kang ,  Kimyeong Eom ,  Soongi Kwon ,  Minjeong Kim

IPC: G09G3/3266 ,  G09G3/3258

CPC classification number: G09G3/3266 ,  G09G3/3258 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0223

Abstract: A scan driver includes a stage, wherein the stage includes: a first output controller including a first pull-up transistor and a first pull-down transistor, wherein the first pull-up transistor has a gate connected to a first control node, and the first pull-down transistor has a gate connected to a second control node; a second output controller including a second pull-up transistor and a second pull-down transistor, wherein the second pull-up transistor has a gate connected to the first control node, and the second pull-down transistor has a gate connected to the second control node; and a stabilizer configured to maintain the first control node at an off-voltage level based on the second control node being at an on-voltage level.

公开(公告)号：US20230140806A1

公开(公告)日：2023-05-04

申请号：US17748926

申请日：2022-05-19

Applicant: Samsung Display Co., Ltd.

Inventor： Haijung In ,  Chulkyu Kang ,  Soongi Kwon ,  Minjeong Kim ,  Kimyeong Eom

IPC: G09G3/3258

Abstract: A driver includes a stage that includes a first controller, a second controller, and a first output unit. The first controller controls a voltage level of a first node. The second controller controls voltage levels of a second node and a third node to be equal to the voltage level of a first node or an opposite voltage level of the voltage level of the first node, and controls a voltage level of a fifth node to be equal to the opposite voltage level of the voltage level of the first node. The first output unit may output a gate control signal, which has a first voltage when the second node and the third node is in an on-voltage level state, and has a second voltage when the fifth node is in an on-voltage level state.