公开(公告)号：US10692428B2

公开(公告)日：2020-06-23

申请号：US15790891

申请日：2017-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Ju Won Yoon ,  Moo Soon Ko ,  Seong Jun Lee ,  Deuk Myung Ji

IPC: G09G3/3233 ,  H01L27/32 ,  H01L51/52

Abstract: An organic light-emitting display device having improved display quality, the organic light-emitting display device may include pixels coupled to scan lines and data lines. Each of the pixels may include a storage unit configured to store a data signal supplied to the data lines. The capacitance of the storage unit may be changed depending on a driving frequency.

公开(公告)号：US20150084035A1

公开(公告)日：2015-03-26

申请号：US14261935

申请日：2014-04-25

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Jo Kim ,  Ji Seon Lee ,  Deuk Myung Ji ,  Yoon Ho Khang ,  Kyung Seop Kim ,  Byeong-Beom Kim ,  Joon Yong Park

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor includes: a substrate; an oxide semiconductor layer disposed on the substrate; a source electrode and a drain electrode each connected to the oxide semiconductor layer and facing each other with respect to the oxide semiconductor layer; an insulating layer disposed on the oxide semiconductor layer; and a gate electrode disposed on the insulating layer. The insulating layer includes a first layer that includes silicon oxide (SiOx), a second layer that is a hydrogen blocking layer, and a third layer that includes silicon nitride (SiNx). The first, second and third layers are sequentially stacked.

Abstract translation: 薄膜晶体管包括：基板; 设置在所述基板上的氧化物半导体层; 源电极和漏电极，各自连接到氧化物半导体层并且相对于氧化物半导体层彼此面对; 设置在所述氧化物半导体层上的绝缘层; 以及设置在所述绝缘层上的栅电极。 绝缘层包括包含氧化硅（SiOx）的第一层，作为氢阻挡层的第二层和包括氮化硅（SiNx）的第三层。 顺序堆叠第一层，第二层和第三层。