公开(公告)号：US10199405B2

公开(公告)日：2019-02-05

申请号：US15671638

申请日：2017-08-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joon-Hwa Bae ,  Byoung Kwon Choo ,  Byung Hoon Kang ,  Woo Jin Cho ,  Hyun Jin Cho ,  Jun Hyuk Cheon ,  Jee-Hyun Lee

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L29/66 ,  H01L21/768

Abstract: A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.