公开(公告)号：US20150228732A1

公开(公告)日：2015-08-13

申请号：US14576123

申请日：2014-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Ki-Hyun Cho ,  Sung-Kyun Park ,  Ji-Hyun Kim ,  Jeong-Min Park ,  Jung-Soo Lee ,  Jun Chun ,  Jin-Ho Ju

IPC: H01L29/40 ,  H01L29/417 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/66

CPC classification number: G02F1/136227 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a gate electrode on a base substrate, an active pattern on the gate electrode, a source electrode on a first end of the active pattern, a drain electrode on a second end of the active pattern, an organic insulation layer on the source electrode and the drain electrode, and a transparent electrode contacting the drain electrode through a contact opening in the organic insulation layer. The drain electrode is spaced from the source electrode. The organic insulation layer includes a first thickness portion around the contact opening and a second thickness portion adjacent to the first thickness portion. The second thickness portion has a thickness greater than that of the first thickness portion.

Abstract translation: 薄膜晶体管基板包括在基底基板上的栅极电极，栅电极上的有源图案，有源图案的第一端上的源电极，有源图案的第二端上的漏电极，有机图案的第二端上的有机绝缘层 在源电极和漏电极上，以及透明电极，通过有机绝缘层中的接触开口与漏电极接触。 漏电极与源电极间隔开。 有机绝缘层包括围绕接触开口的第一厚度部分和与第一厚度部分相邻的第二厚度部分。 第二厚度部分的厚度大于第一厚度部分的厚度。