公开(公告)号：US20190148547A1

公开(公告)日：2019-05-16

申请号：US15997793

申请日：2018-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Young KIM ,  Deok Han BAE ,  Byung Chan RYU ,  Da Un JEON

IPC: H01L29/78 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L29/7835 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76846 ,  H01L23/485 ,  H01L29/4975 ,  H01L29/78

Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.

公开(公告)号：US20240290855A1

公开(公告)日：2024-08-29

申请号：US18657993

申请日：2024-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han BAE ,  Ju Hun PARK ,  Myung Yoon UM

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/41775 ,  H01L27/0924 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/7851 ,  H01L29/786

Abstract: A semiconductor device including a field insulating layer, a part of which protrudes upwardly in a vertical direction on an element isolation region between a first active region and a second active region may be provided. Accordingly, a depth of a source/drain contact to be provided may be reduced, thereby reducing difficulty for providing the source/drain contact may be reduced.

公开(公告)号：US20220320301A1

公开(公告)日：2022-10-06

申请号：US17539772

申请日：2021-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han BAE ,  Ju Hun PARK ,  Myung Yoon UM

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device including a field insulating layer, a part of which protrudes upwardly in a vertical direction on an element isolation region between a first active region and a second active region may be provided. Accordingly, a depth of a source/drain contact to be provided may be reduced, thereby reducing difficulty for providing the source/drain contact may be reduced.

公开(公告)号：US20210126128A1

公开(公告)日：2021-04-29

申请号：US17137850

申请日：2020-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Young KIM ,  Deok Han BAE ,  Byung Chan RYU ,  Da Un JEON

IPC: H01L29/78 ,  H01L21/768 ,  H01L23/485

Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.

公开(公告)号：US20190267459A1

公开(公告)日：2019-08-29

申请号：US16406472

申请日：2019-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok Han BAE ,  Hyung Jong LEE ,  Hyun Jin KIM

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/66 ,  H01L27/12 ,  H01L21/8234 ,  H01L27/092 ,  H01L27/11

Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.