公开(公告)号：US10340358B2

公开(公告)日：2019-07-02

申请号：US15951639

申请日：2018-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung In Suh ,  Hoon Joo Na ,  Min Woo Song ,  Byoung Hoon Lee ,  Chan Hyeong Lee ,  Hu Yong Lee ,  Sang Jin Hyun

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/285

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

公开(公告)号：US20190081152A1

公开(公告)日：2019-03-14

申请号：US15951639

申请日：2018-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung In Suh ,  Hoon Joo Na ,  Min Woo Song ,  Byoung Hoon Lee ,  Chan Hyeong Lee ,  Hu Yong Lee ,  Sang Jin Hyun

IPC: H01L29/49 ,  H01L21/28 ,  H01L21/02 ,  H01L21/285 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/4966 ,  H01L21/02164 ,  H01L21/28088 ,  H01L21/28167 ,  H01L21/28518 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from. the first barrier film.