公开(公告)号：US20230280646A1

公开(公告)日：2023-09-07

申请号：US17972231

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungsoo KIM ,  Sooryong LEE ,  Jaewon YANG ,  Sangchul YEO ,  Hyeok LEE

IPC: G03F1/36 ,  G03F1/80 ,  G03F7/20

CPC classification number: G03F1/36 ,  G03F1/80 ,  G03F7/705

Abstract: The inventive concept provides a corner rounding method of a deep learning-based optical proximity correction (OPC) pattern by which patterning reliability may be ensured, and an OPC method and a mask manufacturing including the corner rounding method. The corner rounding method of a deep learning-based OPC pattern includes: obtaining a contour of a photoresist (PR) pattern or an etching pattern on a wafer; obtaining a square layout of the PR pattern or the etching pattern corresponding to the contour; generating a transform model through deep learning with the square layout and the contour; and obtaining a rounded layout target with respect to a square layout target by using the transform model.

公开(公告)号：US20200168271A1

公开(公告)日：2020-05-28

申请号：US16421855

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ihor VASYLTSOV ,  Youngnam HWANG ,  Jinmin KIM ,  Yongha PARK ,  Hyunsik PARK ,  Jaewon YANG

IPC: G11C11/54 ,  G11C11/4096 ,  G11C11/408 ,  G11C11/4091 ,  G06N3/04

Abstract: A semiconductor memory device includes a memory cell array including first memory cells and second memory cell, and a peripheral circuit. When a first command, a first address, and first input data are received, the peripheral circuit reads first data from the first memory cells based on the first address in response to the first command, performs a first operation by using the first data and the first input data, and reads second data from the second memory cells by using a result of the first operation.