公开(公告)号：US10886280B2

公开(公告)日：2021-01-05

申请号：US16588360

申请日：2019-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin Lee ,  Ji-Eun Lee ,  Kyoung-Ho Jung ,  Satoru Yamada ,  Moonyoung Jeong

IPC: H01L21/28 ,  H01L27/108 ,  H01L29/49 ,  H01L21/3215 ,  H01L29/51

Abstract: Provided are a semiconductor device having a gate and a method of forming the same. The method includes forming a gate dielectric, forming a first conductive material layer on the gate dielectric, forming a source material layer on the first conductive material layer, and diffusing a first element included in the source material layer into the first conductive material layer by performing a thermal treatment process to form a doped material layer.