公开(公告)号：US20210132515A1

公开(公告)日：2021-05-06

申请号：US16880090

申请日：2020-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungho JANG ,  Sungyeol Kim ,  Hyuck Shin ,  Keunhee Bai ,  Injae Lee

IPC: G03F7/20

Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask.
The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force.
The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted.
When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

公开(公告)号：US20200381526A1

公开(公告)日：2020-12-03

申请号：US16820302

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

IPC: H01L29/423 ,  H01L29/40

Abstract: A semiconductor device including a gate structure and a separation structure is provided. The semiconductor device includes: first and second active regions; an insulating layer between the first and second active regions; a first gate structure on the first active region and the insulating layer, the first gate structure having a first end portion on the insulating layer; a second gate structure on the second active region and the insulating layer, the second gate structure having a second end portion facing the first end portion in a first direction, the second gate structure on the insulating layer; and a separation structure between the first end portion and the second end portion and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

公开(公告)号：US12113112B2

公开(公告)日：2024-10-08

申请号：US18236823

申请日：2023-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

IPC: H01L29/423 ,  H01L29/40

CPC classification number: H01L29/4236 ,  H01L29/401 ,  H01L29/42364

Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

公开(公告)号：US20220102516A1

公开(公告)日：2022-03-31

申请号：US17548826

申请日：2021-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

IPC: H01L29/423 ,  H01L29/40

Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

公开(公告)号：US11016400B1

公开(公告)日：2021-05-25

申请号：US16880090

申请日：2020-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungho Jang ,  Sungyeol Kim ,  Hyuck Shin ,  Keunhee Bai ,  Injae Lee

IPC: G03F7/20

Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask. The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force. The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted. When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

公开(公告)号：US10754254B1

公开(公告)日：2020-08-25

申请号：US16678274

申请日：2019-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunhee Bai ,  Jinhong Park ,  Jinseok Heo ,  Heeyoung Go ,  Seongchul Hong

IPC: G03F7/20 ,  G03F1/82 ,  G03F1/86 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.