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1.发明申请Level Sensor of Exposure Apparatus and Wafer-Leveling Methods Using the Same 审中-公开曝光装置的水平传感器和使用其的晶片调平方法公开(公告)号：US20140152991A1
公开(公告)日：2014-06-05
申请号：US13901652
申请日：2013-05-24
发明人： Jinseok Heo , Jeongho Yeo
CPC分类号： G01B11/24 , G01B11/26 , G03F9/7034
摘要： A level sensor of an exposure apparatus includes a light source that generates light that is illuminated onto a top surface of a wafer, a projection part provided in a path of incident light propagating from the light source to the wafer and having a single first slit, a detection part provided in a path of light reflected from the wafer and having a single second slit, and a detector that detects the reflected light that is incident on the second slit of the detection part.
摘要翻译： 曝光装置的液位传感器包括产生照射在晶片顶表面上的光的光源，设置在从光源传播到晶片的入射光路径中并具有单个第一狭缝的突出部分， 检测部，其设置在从所述晶片反射并具有单个第二狭缝的光的路径中;以及检测器，其检测入射在所述检测部的所述第二狭缝上的反射光。
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公开(公告)号：US10754254B1
公开(公告)日：2020-08-25
申请号：US16678274
申请日：2019-11-08
发明人： Keunhee Bai , Jinhong Park , Jinseok Heo , Heeyoung Go , Seongchul Hong
摘要： An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.
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3.发明申请公开(公告)号：US20200348599A1
公开(公告)日：2020-11-05
申请号：US16676588
申请日：2019-11-07
发明人： Keunhee Bai , Jinhong Park , Jinseok Heo , Seungmin Lee , Suntaek Lim
IPC分类号： G03F7/20 , H01L21/268
摘要： Disclosed are a system for fabricating a semiconductor device and a method of fabricating a semiconductor device. The system may include a chamber, an extreme ultraviolet (EUV) source in the chamber and configured to generate an EUV beam, an optical system on the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a particle collector between the reticle and the optical system and configured to allow for a selective transmission of the EUV beam and to remove a particle.
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4.发明申请公开(公告)号：US20170084918A1
公开(公告)日：2017-03-23
申请号：US15168582
申请日：2016-05-31
发明人： Hojung Yang , Hwiyeol Park , Kyunghoon Cho , Kyounghwan Kim , Seunghoon Nam , Huisu Jeong , Jinseok Heo
IPC分类号： H01M4/525 , H01M4/04 , H01M4/131 , H01M10/0525 , H01M4/52
CPC分类号： H01M4/525 , H01M4/0416 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/523 , H01M10/052 , H01M10/0525 , H01M10/0585 , H01M2004/021 , H01M2004/028
摘要： A cathode of a three-dimensional lithium secondary is defined by a sintered body including a cathode active material, in which a thickness of the sintered body is in a range of about 5 μm to about 30 μm, and an electrode density of the sintered body is in a range of about 3.7 g/cc to about 4.6 g/cc. The cathode active material may include a lithium cobalt oxide.
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公开(公告)号：US20230223941A1
公开(公告)日：2023-07-13
申请号：US17932023
申请日：2022-09-14
发明人： Jaewoo Lee , Yoo-Chang Sung , Jeongdon Ihm , Hojun Chang , Jinseok Heo
IPC分类号： H03K21/02 , G11C11/4076 , G11C11/4093 , H03K23/40
CPC分类号： H03K21/026 , G11C11/4076 , G11C11/4093 , H03K23/40
摘要： Disclosed is a frequency divider which includes a frequency dividing core circuit that includes a plurality of transistors and is configured to generate at least one division clock signal based on a clock signal and an inverted clock signal, a controller that is configured to generate a body bias control signal based on clock frequency information, and an adaptive body bias (ABB) generator that is configured to generate at least one body bias based on the body bias control signal and configured to apply the at least one body bias to a body of one or more of the plurality of transistors.
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公开(公告)号：US09857690B2
公开(公告)日：2018-01-02
申请号：US15182926
申请日：2016-06-15
发明人： Hoyeon Kim , Jinseok Heo , Insung Kim
CPC分类号： G03F7/70033 , G02B19/0095 , G03F7/70916 , H05G2/001
摘要： An extreme ultraviolet generation device, including a chamber with an internal space; a plasma generator to generate plasma in the internal space; a condenser in the internal space to gather light generated from the plasma; and a monitor to monitor the internal space in an omnidirectional manner.
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公开(公告)号：US11086224B2
公开(公告)日：2021-08-10
申请号：US16676588
申请日：2019-11-07
发明人： Keunhee Bai , Jinhong Park , Jinseok Heo , Seungmin Lee , Suntaek Lim
IPC分类号： G03F7/20 , H01L21/268
摘要： Disclosed are a system for fabricating a semiconductor device and a method of fabricating a semiconductor device. The system may include a chamber, an extreme ultraviolet (EUV) source in the chamber and configured to generate an EUV beam, an optical system on the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a particle collector between the reticle and the optical system and configured to allow for a selective transmission of the EUV beam and to remove a particle.
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公开(公告)号：US11086210B2
公开(公告)日：2021-08-10
申请号：US16578628
申请日：2019-09-23
发明人： Yigwon Kim , Sangjin Kim , Heeyoung Go , Heebom Kim , Hoon Kim , Hong-Seock Choi , Jinseok Heo
IPC分类号： G03F1/24
摘要： Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.
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9.发明授权公开(公告)号：US10312512B2
公开(公告)日：2019-06-04
申请号：US15168582
申请日：2016-05-31
发明人： Hojung Yang , Hwiyeol Park , Kyunghoon Cho , Kyounghwan Kim , Seunghoon Nam , Huisu Jeong , Jinseok Heo
摘要： A cathode of a three-dimensional lithium secondary is defined by a sintered body including a cathode active material, in which a thickness of the sintered body is in a range of about 5 μm to about 30 μm, and an electrode density of the sintered body is in a range of about 3.7 g/cc to about 4.6 g/cc. The cathode active material may include a lithium cobalt oxide.
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10.发明授权公开(公告)号：US09979043B2
公开(公告)日：2018-05-22
申请号：US14982748
申请日：2015-12-29
发明人： Hojung Yang , Jinseok Heo , Hwiyeol Park , Kyunghoon Cho
IPC分类号： H01M10/04 , H01M4/48 , H01M4/66 , H01M10/052
CPC分类号： H01M10/04 , H01M4/48 , H01M4/668 , H01M10/052
摘要： A three dimensional (“3D”) secondary battery includes an electrolyte layer and an anode active material layer that are sequentially stacked on a plurality of first trenches that are provided in a cathode active material layer where, in the anode active material layer, a plurality of second trenches having similar shape to that of the first trenches is provided and the plurality of second trenches are filled with an elastic member and where the elastic member absorbs expansion of the anode active material layer during charging and discharging the 3D secondary battery, and thus, the degradation of the 3-dimensional secondary battery is prevented.
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