公开(公告)号：US20140117313A1

公开(公告)日：2014-05-01

申请号：US13964353

申请日：2013-08-12

Applicant: Seoul National University R & DB Foundation ,  Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Hyung-cheol SHIN ,  Jae-hong LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Abstract translation: 根据示例实施例，具有可调谐屏障的石墨烯开关器件包括半导体衬底，其包括掺杂有杂质的第一阱，在半导体衬底的第一区域上的第一电极，在半导体衬底的第二区域上的绝缘层 在所述绝缘层上的石墨烯层，并且朝向所述第一电极延伸到所述半导体衬底上，所述石墨烯层和绝缘层上的第二电极，所述石墨烯层上的栅极绝缘层和所述栅极绝缘层上的栅极电极。 半导体衬底的第一区域和第二区域可以彼此间隔开。 石墨烯层与第一电极间隔开。 石墨烯层的下部可以接触第一孔。 第一阱被配置为在石墨烯层和第一电极之间形成能量势垒。

公开(公告)号：US20140097404A1

公开(公告)日：2014-04-10

申请号：US13943006

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： David SEO ,  Ho-jung KIM ,  Hyun-jong CHUNG ,  Seong-jun PARK ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Jin-seong HEO

IPC: H01L29/16

CPC classification number: H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.

Abstract translation: 存储器件包括具有源电极，漏电极和栅电极的石墨烯开关器件。 石墨烯开关装置包括形成在漏电极和沟道之间的从源电极朝向漏电极的方向上的肖特基势垒。 存储器件不需要包括额外的存储元件。

公开(公告)号：US20140097403A1

公开(公告)日：2014-04-10

申请号：US13906657

申请日：2013-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Jae-ho LEE ,  Hyun-jong CHUNG

IPC: H01L29/16 ,  H01L29/78

CPC classification number: H01L29/16 ,  B82Y99/00 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.

Abstract translation: 根据示例性实施例，隧道场效应晶体管（TFET）包括衬底上的第一电极，第一电极的一部分上的半导体层，半导体层上的石墨烯通道，石墨烯通道上的第二电极， 栅极绝缘层，栅极绝缘层上的栅电极。 第一电极可以包括与衬底的第一区域相邻的部分。 半导体层可以在石墨烯通道和第一电极的部分之间。 石墨烯通道可以延伸超过半导体层和第一电极的至少一个的边缘到衬底的第一区域之上。