-
公开(公告)号:US11653396B2
公开(公告)日:2023-05-16
申请号:US17497580
申请日:2021-10-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeongyeob Oak , Sejin Park , Jisoo Song , Wonil Lee
Abstract: The present disclosure relates to a research that has been conducted with the support of the “Cross-Departmental Giga KOREA Project” funded by the government (the Ministry of Science and ICT) in 2017 (No. GK17N0100, millimeter wave 5G mobile communication system development). The present disclosure relates to a communication technique for convergence of a 5G communication system for supporting a higher data transmission rate beyond a 4G system with an IoT technology, and a system therefor. The present disclosure may be applied to an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety-related service, etc.) on the basis of a 5G communication technology and an IoT-related technology.
-
公开(公告)号:US11302698B2
公开(公告)日:2022-04-12
申请号:US16829025
申请日:2020-03-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yoonyoung Choi , Sungsoo Yim , Byeongmoo Kang , Seongmo Koo , Sejin Park , Jinwoo Bae
IPC: H01L27/108 , H01L49/02
Abstract: A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.
-
13.
公开(公告)号:US11166193B2
公开(公告)日:2021-11-02
申请号:US16632052
申请日:2018-07-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaehwan Jeon , Sejin Park , Wonil Lee
Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). The communication method of a base station in a wireless communication system, according to one embodiment of the disclosure, can comprise the steps of: setting a transmission period of a poll bit for indicating the transmission of information on whether a packet has been successfully received; generating a packet including the poll bit set on the basis of the transmission period; and transmitting the generated packet to a terminal.
-
公开(公告)号:US11147107B2
公开(公告)日:2021-10-12
申请号:US16611346
申请日:2017-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeongyeob Oak , Sejin Park , Jisoo Song , Wonil Lee
Abstract: The present disclosure relates to a research that has been conducted with the support of the “Cross-Depaitmental Giga KOREA Project” funded by the government (the Ministry of Science and ICT) in 2017 (No. GK17N0100, millimeter wave 5G mobile communication system development). The present disclosure relates to a communication technique for convergence of a 5G communication system for supporting a higher data transmission rate beyond a 4G system with an IoT technology, and a system therefor. The present disclosure may be applied to an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety-related service, etc.) on the basis of a 5G communication technology and an IoT-related technology.
-
-
-