公开(公告)号：US11581326B2

公开(公告)日：2023-02-14

申请号：US16913705

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Jong Han ,  Jaekang Koh ,  Munjun Kim ,  Su Jong Kim ,  Seung-Heon Lee

IPC: H01L27/11573 ,  H01L23/528 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/1158 ,  H01L27/11575

Abstract: A three-dimensional semiconductor memory device is disclosed. The device may include a substrate including a cell array region and a connection region provided at an end portion of the cell array region, an electrode structure extending from the cell array region to the connection region, the electrode structure including electrodes sequentially stacked on the substrate, an upper insulating layer provided on the electrode structure, a first horizontal insulating layer provided in the upper insulating layer and extending along the electrodes, and first contact plugs provided on the connection region to penetrate the upper insulating layer and the first horizontal insulating layer. The first horizontal insulating layer may include a material having a better etch-resistive property than the upper insulating layer.

公开(公告)号：US10748908B2

公开(公告)日：2020-08-18

申请号：US16426075

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L27/108 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/033

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

公开(公告)号：US10566333B2

公开(公告)日：2020-02-18

申请号：US15160264

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L27/108 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/033

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

公开(公告)号：US09747945B2

公开(公告)日：2017-08-29

申请号：US15273173

申请日：2016-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Eun Kim ,  Chang-Gun Um ,  Seung-Heon Lee ,  Kyung-Ho Chae ,  Kyung-Il Lee

IPC: G11B27/031 ,  H04N5/765 ,  H04N9/802 ,  G11B27/36

CPC classification number: G11B27/031 ,  G11B27/36 ,  H04N5/765 ,  H04N9/802

Abstract: A method for creating a content in an electronic device is provided. The method includes acquiring first media data acquired by at least one external electronic device, acquiring second media data on a basis of at least a part of the first media data, recognizing a feature of the second media data acquired by the at least one external electronic device, and creating the content on a basis of at least a part of the feature of the second media data.