公开(公告)号：US20190279988A1

公开(公告)日：2019-09-12

申请号：US16426075

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon LEE ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L27/108 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/8234

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

公开(公告)号：US11882691B2

公开(公告)日：2024-01-23

申请号：US17858361

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L21/3213 ,  H01L21/033 ,  H10B12/00 ,  H01L21/8234

CPC classification number: H10B12/482 ,  H01L21/0332 ,  H01L21/32139 ,  H01L21/823475 ,  H01L21/823481 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/485

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

公开(公告)号：US10748908B2

公开(公告)日：2020-08-18

申请号：US16426075

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L27/108 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/033

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.

公开(公告)号：US10566333B2

公开(公告)日：2020-02-18

申请号：US15160264

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  ByeongJu Bae

IPC: H01L27/108 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/033

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch masks to form bit lines, growing second mask patterns from top surfaces of the first mask patterns, and performing a patterning process using the second mask patterns as etch masks to form contact holes exposing the active regions between the bit lines.