公开(公告)号：US20130306966A1

公开(公告)日：2013-11-21

申请号：US13721635

申请日：2012-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-baek SEON ,  Tae-sang KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Kyoung-seok SON ,  Sang-yoon LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/2206 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Abstract translation: 具有硫掺杂的氮氧化锌通道层的晶体管及其制造方法包括相对于约0.1at％至约1.2at％的锌含量的硫含量比的ZnON沟道层，源电极和漏极 分别形成在沟道层的第一区域和第二区域上的电极，对应于沟道层的栅电极以及沟道层和栅电极之间的栅极绝缘层。