公开(公告)号：US20240145288A1

公开(公告)日：2024-05-02

申请号：US18323719

申请日：2023-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbok LEE ,  Yihwan KIM ,  Seongkeun CHO ,  Sangchul HAN

IPC: H01L21/683 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4583

Abstract: A substrate processing apparatus includes a chamber providing a space where a semiconductor process is performed on a semiconductor substrate, a substrate plate configured to support the semiconductor substrate, the substrate plate having a central region and a peripheral region surrounding the central region, a central embossing pattern on the central region and configured to support a central portion of the semiconductor substrate, a plurality of first embossing patterns radially arranged around the central embossing pattern on the peripheral region, each of the plurality of first embossing patterns extending radially outward from the central embossing pattern with a first length, and a plurality of second embossing patterns respectively provided between the first embossing patterns on the peripheral region, each of the plurality of second embossing patterns extending radially outward from the central embossing pattern with a second length that is less than the first length.

公开(公告)号：US20190081160A1

公开(公告)日：2019-03-14

申请号：US15956166

申请日：2018-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan SUH ,  Sangmoon LEE ,  Yihwan KIM ,  Woo Bin SONG ,  Dongsuk SHIN ,  Seung Ryul LEE

IPC: H01L29/66 ,  H01L21/28

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.