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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    15.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20130221398A1

    公开(公告)日：2013-08-29

    申请号：US13774376

    申请日：2013-02-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bum Joon Kim ,  Young Sun Kim ,  Suk Ho Yoon ,  Ki Sung Kim ,  Dong Chul Shin

    IPC: H01L33/62

    CPC classification number: H01L33/62 ,  H01L33/145 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure.

    Abstract translation: 半导体发光器件包括导电衬底，发光结构，第一接触层，导电通孔和电流中断区域。 发光结构设置在导电基板上，并且包括第一导电半导体层，有源层和第二导电半导体层。 第一接触层设置在导电基板和第一导电半导体层之间。 导电通孔设置成从导电基板延伸以连接到第二导电半导体层。 电流中断区域设置在发光结构中与导电通孔相邻的区域中。

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