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    Semiconductor light emitting device
    2.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09000460B2

    公开(公告)日：2015-04-07

    申请号：US13712656

    申请日：2012-12-12

    申请人： Samsung Electronics Co., Ltd.

    发明人： Nam Sung Kim ,  Dong Ik Shin ,  Hyun Wook Shim ,  Dong Joon Kim ,  Young Sun Kim ,  Jung Seung Yang

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/32

    摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.

    摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。

    Method of manufacturing light emitting device
    3.
    发明授权
    Method of manufacturing light emitting device 有权
    制造发光器件的方法

    公开(公告)号：US08828751B2

    公开(公告)日：2014-09-09

    申请号：US13844569

    申请日：2013-03-15

    申请人： Samsung Electronics Co., Ltd.

    发明人： Do Young Rhee ,  Tan Sakong ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim ,  Sung Tae Kim

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/26

    CPC分类号： H01L33/005 ,  H01L33/26

    摘要： Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

    摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

    Semiconductor light emitting device
    4.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08716694B2

    公开(公告)日：2014-05-06

    申请号：US13707027

    申请日：2012-12-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sang Heon Han ,  Jeong Wook Lee ,  Jae Sung Hyun ,  Jin Young Lim ,  Dong Joon Kim ,  Young Sun Kim

    IPC分类号： H01L33/32 ,  H01L33/06

    CPC分类号： H01L33/0025 ,  H01L33/06 ,  H01L33/32

    摘要： A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0≦x

    摘要翻译： 半导体发光器件包括：n型和p型半导体层; 以及设置在n型和p型半导体层之间的有源层。 有源层具有多个量子阱层和多个量子势垒层交替设置的结构，其中多个量子阱层由Al x In y Ga 1-x-y N（0＆nlE; x <1,0

    Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same
    8.
    发明授权
    Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same 有权
    化学气相沉积装置及使用其形成半导体外延薄膜的方法

    公开(公告)号：US09171994B2

    公开(公告)日：2015-10-27

    申请号：US14518948

    申请日：2014-10-20

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

    IPC分类号： H01L21/00 ,  H01L33/00 ,  C23C16/455 ,  C23C16/458

    CPC分类号： H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

    摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

    摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130146842A1

    公开(公告)日：2013-06-13

    申请号：US13712656

    申请日：2012-12-12

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Nam Sung KIM ,  Dong Ik Shin ,  Hyun Wook Shim ,  Dong Joon Kim ,  Young Sun Kim ,  Jung Seung YANG

    IPC分类号： H01L33/06

    CPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/32

    摘要： A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer.

    摘要翻译： 半导体发光器件包括第一导电类型和第二导电类型半导体层，有源层设置在半导体层之间并且具有其中一个或多个量子阱层和一个或多个量子势垒层交替布置的结构。电子阻挡层 设置在有源层和第二导电类型半导体层之间。 覆盖层设置在有源层和电子阻挡层之间，并阻止掺杂剂元素从第二导电类型半导体层注入到有源层中。