公开(公告)号：US20130203195A1

公开(公告)日：2013-08-08

申请号：US13762983

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Gi Bum KIM ,  Yu Seung KIM ,  Seung Woo CHOI ,  Gyeong Seon PARK ,  Shi Young LEE

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。