公开(公告)号：US20130203195A1

公开(公告)日：2013-08-08

申请号：US13762983

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Gi Bum KIM ,  Yu Seung KIM ,  Seung Woo CHOI ,  Gyeong Seon PARK ,  Shi Young LEE

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。

公开(公告)号：US20160359087A1

公开(公告)日：2016-12-08

申请号：US15158059

申请日：2016-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gong Shin LEE ,  In Joon YEO ,  Sung Won KO ,  Shi Young LEE ,  Byung Chul CHOI

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  G02F1/133 ,  F21V29/70 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1368 ,  F21V8/00 ,  F21K99/00 ,  H01L33/06 ,  G02F1/1333

CPC classification number: G02B6/0068 ,  F21K9/233 ,  F21K9/238 ,  F21K9/27 ,  F21K9/278 ,  F21S8/02 ,  F21V23/005 ,  F21V23/006 ,  F21V23/02 ,  F21V29/773 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  G02B6/0055 ,  G02B6/0073 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: Provided is a semiconductor light emitting device including: a light emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode structure penetrating through the second semiconductor layer and the active layer to be connected to the first semiconductor layer, the first electrode structure having at least one contact region; and a second electrode structure connected to the second semiconductor layer, wherein the first semiconductor layer includes a protrusion portion provided on the at least one contact region and a recess portion provided in a circumferential portion of the protrusion portion.

Abstract translation: 提供一种半导体发光器件，包括：发光堆叠，包括第一半导体层，有源层和第二半导体层; 穿过所述第二半导体层的第一电极结构和要连接到所述第一半导体层的有源层，所述第一电极结构具有至少一个接触区域; 以及连接到第二半导体层的第二电极结构，其中第一半导体层包括设置在至少一个接触区域上的突出部分和设置在突出部分的圆周部分中的凹部。

公开(公告)号：US20130309865A1

公开(公告)日：2013-11-21

申请号：US13894170

申请日：2013-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shi Young LEE ,  Tae Hyung KIM ,  Gi Bum KIM ,  Yu Seung KIM ,  Ju Hyun KIM ,  Jin Gi HONG

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/3083 ,  H01L21/76898 ,  H01L2933/0033

Abstract: There is provided a method of manufacturing a substrate for mounting an electronic device. The method includes disposing a protective layer on a surface of the substrate except for an edge portion thereof . An oxide film is disposed on the entirety of the surface of the substrate except for where the protective layer is disposed The oxide film is grown. A through hole is formed in a thickness direction of the substrate by selectively etching the protective layer. The oxide film is removed. In the manufacturing method, defects in the substrate for mounting an electronic device may be reduced and manufacturing costs can be reduced.

Abstract translation: 提供了一种制造用于安装电子设备的基板的方法。 该方法包括在除了其边缘部分之外的基板的表面上设置保护层。 除了设置保护层的地方之外，氧化膜设置在基板的整个表面上，生长氧化膜。 通过选择性地蚀刻保护层，在基板的厚度方向上形成通孔。 去除氧化膜。 在制造方法中，可以减少用于安装电子设备的基板中的缺陷，并且可以降低制造成本。